X-On Electronics has gained recognition as a prominent supplier of PSMN5R5-60YS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN5R5-60YS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN5R5-60YS,115 Nexperia

PSMN5R5-60YS,115 electronic component of Nexperia
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Part No.PSMN5R5-60YS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CHANNEL 60V STD LEVEL MOSFET
Datasheet: PSMN5R5-60YS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.76 ea
Line Total: USD 1.76 
Availability - 10915
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
260
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 132
Multiples : 1
132 : USD 1.1158
1000 : USD 0.9251
1500 : USD 0.8817

7275
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 0.728
3000 : USD 0.728
4500 : USD 0.728
6000 : USD 0.728
7500 : USD 0.728

10915
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.76
10 : USD 1.232
100 : USD 0.9614
500 : USD 0.8415
1000 : USD 0.7172
1500 : USD 0.6886
3000 : USD 0.6512
9000 : USD 0.6501

1455
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 0.8325

1455
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 0.8493
3000 : USD 0.7334

260
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 135
Multiples : 1
135 : USD 0.9643

   
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Product Category
RoHS - XON
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Continuous Drain Current
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We are delighted to provide the PSMN5R5-60YS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN5R5-60YS,115 and other electronic components in the MOSFETs category and beyond.

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PSMN5R5-60YS N-channel LFPAK 60 V, 5.2 m standard level FET Rev. 02 24 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency in switching power LFPAK provides maximum power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j 1 I drain current T = 25 C see Figure 1 - - 100 A D mb P total power T = 25 C see Figure 2 - - 130 W tot mb dissipation T junction temperature -55 - 175 C j Avalanche ruggedness E non-repetitive V =10V T =25C - - 170 mJ DS(AL)S GS j(init) drain-source I = 100 A V 60 V D sup avalanche energy R =50 unclamped GS Dynamic characteristics Q gate-drain charge V =10V I =75A - 11.2 - nC GD GS D V = 30 V see Figure 14 DS Q total gate charge - 56 - nC G(tot) and 15Nexperia PSMN5R5-60YS N-channel LFPAK 60 V, 5.2 m standard level FET Table 1. Quick reference continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =15A --8.3 m DSon GS D on-state resistance T = 100 C see Figure 12 j V =10V I =15A -3.6 5.2 m GS D T = 25 C see Figure 13 j 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN5R5-60YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 Nexperia B.V. 2017. All rights reserved PSMN5R5-60YS 2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 24 December 2009 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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