X-On Electronics has gained recognition as a prominent supplier of NJG1130KA1-TE1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. NJG1130KA1-TE1 RF Amplifier are a product manufactured by Nisshinbo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

NJG1130KA1-TE1 Nisshinbo

NJG1130KA1-TE1 electronic component of Nisshinbo
NJG1130KA1-TE1 Nisshinbo
NJG1130KA1-TE1 RF Amplifier
NJG1130KA1-TE1  Semiconductors

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Part No. NJG1130KA1-TE1
Manufacturer: Nisshinbo
Category: RF Amplifier
Description: RF Amplifier GNSS Low Noise Amp GaAs MMIC
Datasheet: NJG1130KA1-TE1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.942 ea
Line Total: USD 3.94 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 3.942
10 : USD 1.485
25 : USD 1.3176
50 : USD 1.188
100 : USD 1.0573
250 : USD 0.8262
500 : USD 0.6977
1000 : USD 0.689
3000 : USD 0.6761

   
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We are delighted to provide the NJG1130KA1-TE1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NJG1130KA1-TE1 and other electronic components in the RF Amplifier category and beyond.

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NJG1130KA1 GNSS LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION PACKAGE OUTLINE NJG1130KA1 is a low noise amplifier GaAs MMIC designed for GNSS (Global Navigation Satellite Systems). The LNA offers excellent low noise figure, high linearity and low current consumption. Two stage amplifier and ESD protection circuit are integrated in the IC to achieve very high gain and high ESD tolerance. NJG1130KA1 An ultra-small and ultra-thin package of FLP6-A1 is adopted. APPLICATIONS GNSS applications, like GPS, Galileo, GLONASS and COMPASS PND (Personal Navigation Device), Car Navigation, Tablet PC, Mobile Phone, and others mobile device applications GPS L2 Band application Note: For GPS L2 Band application please refer to Application Note FEATURES Low voltage operation +2.85V typ. Low current consumption 5.0mA typ. High gain 29.0dB typ. f=1575MHz Low noise figure 0.65dB typ. f=1575MHz 1dB gain compression output power +11.0dBm typ. f=1575MHz High output IP3 +14dBm typ. f=1575+1575.1MHz, Pin=-35dBm Ultra-small & ultra-thin package FLP6-A1 (Package size: 1.6 x 1.6 x 0.6mm) PIN CONFIGURATION (Top View) Pin Connection AMP 4 3 1. RF OUT 2. GND 3. VDD 4. RF IN 5 2 5. GND 6. GND AMP 6 1 Package Orientation Mark Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2019-04-22 - 1 - NJG1130KA1 ABSOLUTE MAXIMUM RATINGS T =+25C, Z =Z =50 a s l PARAMETERS SYMBOL CONDITIONS RATINGS UNITS Drain Voltage V 5.0 V DD Input power Pin V =2.85V +15 dBm DD Power dissipation P on PCB board, at Tjmax=150C 170 mW D Operating temperature T -40~+85 C opr Storage temperature T -55~+150 C stg ELECTRICAL CHARACTERISTICS GENERAL CONDITIONS: V =2.85V, f =1575MHz, T =+25C, Z =Z =50, with application circuit DD RF a s l PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage V 2.5 2.85 3.3 V DD Operating current I RF OFF - 5.0 8.5 mA DD Small signal gain Gain 26.0 29.0 31.5 dB Exclude PCB & connector Noise figure NF - 0.65 0.95 dB losses (0.10dB) 1dB gain compression P +5.0 +11.0 - dBm -1dB(out) output power 3rd order output f1=f , f2=f1+100kHz, RF OIP3 +7.0 +14.0 - dBm intercept point Pin=-35dBm RF IN VSWR VSWRi - 2.4 2.8 RF OUT VSWR VSWRo - 1.6 2.0 - 2 -

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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Nisshinbo Micro Devices Inc
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NJR Corporation/NJRC
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