NTE2508 (NPN) & NTE2509 (PNP) Silicon Complementary Transistors Video Output for HDTV Features: High Gain Bandwidth Product: f = 500MHz T High Breakdown Voltage: V = 120V Min CEO Low Reverse Transfer Capacitance and Excellent HF Response Applications: HighDefinition CRT Display Video Output WideBand Amp Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CBO Collector to Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CEO Emitter to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Collector Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 80V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 2V, I = 0 0.1 A EBO EB C DC Current Gain h V = 10V, I = 50mA 40 320 FE CE C V = 10V, I = 200mA 20 CE C Gain Bandwidth Product f V = 10V, I = 50mA 400 MHz T CE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance NTE2508 C V = 30V, f = 1MHz 3.1 pF ob CB NTE2509 4.4 pF Reverse Transfer Capacitance NTE2508 C V = 30V, f = 1MHz 2.7 pF re CB NTE2509 4.0 pF Collector to Emitter Saturation Voltage V I = 50mA, I = 5mA 1.0 V CE(sat) C B Base to Emitter Saturation Voltage V I = 50mA, I = 5mA 1.0 V BE(sat) C B .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) EC B .610 (15.5) .094 (2.4)