X-On Electronics has gained recognition as a prominent supplier of NTE2679 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2679 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2679 NTE

NTE2679 electronic component of NTE
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See Product Specifications
Part No.NTE2679
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 1.5kV; 6A; 30W; TO220FP
Datasheet: NTE2679 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 3.78 ea
Line Total: USD 75.6 
Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 20
Multiples : 1
20 : USD 3.78
50 : USD 2.4516
100 : USD 2.268
200 : USD 2.0844
500 : USD 1.944

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 4.3557
3 : USD 3.9215
6 : USD 2.8496
16 : USD 2.7003

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2679 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2679 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2679 Silicon NPN Transistor Power, High Voltage w/BuiltIn Damper Diode TO220Full Pack Features: High Breakdown Voltage: V = 1500V Min CBO Wide Area of Safe Operation BuiltIn Damper Diode Applications: Horizontal Deflection Output for TV or CRT Monitor Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ..................................................... 1500V CBO CollectorEmitter Voltage, V .................................................... 1500V CEO EmitterBase Voltage, V .......................................................... 5V EBO Collector Current, I C Continuous ................................................................... 6A Peak ........................................................................ 9A Continuous Base Current, I .......................................................... 3A B Collector Power Dissipation, P C T = +25C .................................................................. 2W A T = +25C ................................................................. 30W C Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit EmitterBase Breakdown Voltage V I = 500mA, I = 0 5 V (BR)EBO E C CollectorEmitter Saturation Voltage V I = 3A, I = 750mA 2.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 3A, I = 750mA 1.5 V BE(sat) C B Collector Cutoff Current I V = 1000V, I = 0 50 A CBO CB E V = 1500V, I = 0 1.0 mA CB E DC Current Gain h I = 3A, V = 5V 5 12 FE C CE CollectorEmitter Diode Forward Voltage V I = 3A 2.0 V ECF F Current Gain Bandwidth Product f I = 100mA, V = 10V, f = 3 MHz T C CE 0.5MHz Storage Time t Resistive Load 5.0 s stg I = 3A, I = 750mA, I = 1.5A C B1 B2 Fall Time t 0.5 s f Rev. 615.177 (4.5) .394 (10.0) .108 (2.75) .169 (4.3) .335 (8.5) .590 (15.0) BEC .150 (3.8) .532 (13.5) Min .100 (2.54) .090 (2.3)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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