X-On Electronics has gained recognition as a prominent supplier of NTE486 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE486 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE486 NTE

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Part No.	NTE486
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; RF; 35V; 150mA; 750mW; TO39
Datasheet:	NTE486 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 4.1393 ea
Line Total: USD 41.39

Availability - 0

MOQ: 10 Multiples: 10
Pack Size: 10

NTE486 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 10 Multiples : 10	10 : USD 4.1393 50 : USD 3.3149 100 : USD 3.0535 200 : USD 2.8339 500 : USD 2.6456

0 Ship by Wed. 25 Dec to Fri. 27 Dec MOQ : 1 Multiples : 1	1 : USD 5.9386 3 : USD 5.3342 4 : USD 3.889 11 : USD 3.6788

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Polarisation Bipolar Bipolar
Mounting Tht Tht
Case To39 To39
Kind Of Transistor Rf Rf
Type Of Transistor Npn Npn
Collector-Emitter Voltage 35 V 35 V
Collector Current 150 mA 150 mA
Power Dissipation 750 mW 750 mW
Frequency 407 To 512 MHz 407 To 512 MHz

We are delighted to provide the NTE486 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE486 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE486 Silicon NPN Transistor RF High Frequency Amplifier Description: The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use in 12.5V UHF largesignal applications required in industrial equipment. Features: Specified 12.5V, 470MHz Characteristics: Output Power = 0.75W Minimum Gain = 8dB Effeciency = 50% S Parameter Data from 100MHz to 1GHz Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14.3mW/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 5mA, I = 0 20 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 100 A, I = 0 35 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 100 A, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 10 A CEO CE B ON Characteristics DC Current Gain h V = 10V, I = 50mA 20 60 150 FE CE C CollectorEmitter Saturation Voltage V I = 50mA, I = 5mA 0.5 V CE(sat) C BElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Current GainBandwidth Product f V = 10V, I = 100mA, f = 200MHz 1800 2000 MHz T CE C Output Capacitance C V = 12.5V, I = 0, f = 1MHz 3.5 4.0 pF ob CB E Functional Tests CommonEmitter Amplifier Power Gain G 8.0 8.5 dB V = 12.5V, P = 0.75W, PE CC O f = 470MHz Collector Efficiency 50 70 % Series Equivalent Input Impedance Z 14+j4.0 in Series Equivalent Output Impedance Z 28j38 out .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Emitter Collector/Case 45 .031 (.793)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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