2PB1424,115 NXP

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of 2PB1424 20 V, 3 A PNP low V (BISS) transistor CEsat Rev. 02 15 January 2007 Product data sheet 1. Product prole 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a medium power CEsat SOT89 (SC-62/TO-243) at lead Surface-Mounted Device (SMD) plastic package. NPN complement: 2PD2150. 1.2 Features n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n High efciency due to less heat generation n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications n DC-to-DC conversion n MOSFET gate driving n Motor control n Charging circuits n Power switches (e.g. motors, fans) n Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - - 20 V CEO I collector current - - -3A C I peak collector current single pulse -- -5A CM t 1ms p 1 V collector-emitter I = - 2A - - 0.2 - 0.5 V CEsat C saturation voltage I = - 0.1 A B 1 Pulse test: t 300 s 0.02. p