BGU7258 5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass Rev. 3 29 August 2018 Product data sheet 1 Product profile 1.1 General description The BGU7258 is a fully integrated MMIC Low Noise Amplifier (LNA) for wireless receiver applications in the 5 GHz to 6 GHz ISM band. Manufactured in NXPs high performance SiGe:C technology, the BGU7258 couples best-in-class gain, noise figure, linearity and efficiency with the process stability and ruggedness that are the hallmarks of SiGe technology. The BGU7258 features a robust temperature-compensated internal bias network and an integral bypass / shutdown feature that stabilizes the DC operating point over temperature and enables operation in the presence of high input signals, while minimizing current consumption in bypass (standby) mode. The 1.6 mm x 1.6 mm footprint coupled with only two external components, makes the circuit board implementation of the BGU7258 LNA the smallest IEEE 802.11ac LNA with bypass solution on the market, ideal for space sensitive applications. 1.2 Features and benefits Fully integrated, high performance LNA with built-in bypass Integrated DC blocking at RF input and RF output, with only two external components needed. Low 1.6 dB noise figure with 13 mA current consumption Low bypass current of 1 A (typical) Single supply 3.0 V to 3.6 V operation Integrated concurrent 2.4 GHz notch filter and temperature stabilized bias network High IP3 and low EVM i High ESD protection of 2 kV (HBM) on all pins Small, 0.5 mm pitch, 1.6 x 1.6 x 0.5 mm QFN-style package, MSL 1 at 260 C Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) following NXPs RHF-2006 indicator D (dark green) 1.3 Applications IEEE 802.11a/n/ac WiFi, WLAN Smartphones, tablets, net-books, and other portable computing devices Access points, routers, gateways Wireless video LTE advanced in unlicensed spectrum (LTE-U) General-purpose ISM applications HXSON6NXP Semiconductors BGU7258 5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass 1.4 Quick reference data Table 1.Quick reference data T = 25 C V = 3.3 V Z = Z = 50 P = -30 dBm f = 5.5 GHz unless otherwise specified. amb CC S L i All measurements done on application board (with a DC-decoupling capacitor of 4.7 nF placed close to V pin 6 and a 0.3 pF matching shunt capacitor at RF IN) with SMA connectors as CC reference plane. Symbol Parameter Conditions Min Typ Max Unit I supply current gain mode - 13 - mA CC bypass mode - 1 - A G power gain gain mode p 1 f = 5.1 GHz 12 14 16 dB 1 f = 5.9 GHz 11 13 15 dB bypass mode 1 f = 5.1 GHz - -7 - dB 1 f = 5.9 GHz - -7 - dB P input power at 1 dB gain compression gain mode - -4 - dBm i(1dB) 1 NF noise figure gain mode - 1.6 - dB 1 Printed-Circuit Board (PCB) and connector losses excluded. 2 Pinning information Table 2.Pinning Pin Symbol Description Simplified outline Graphic symbol 1 CTRL gain control, switch between 6 gain and bypass mode 6 5 4 2 RF IN RF in 2 5 7 3 GND ground 4 GND ground 3, 4, 7 1 1 2 3 aaa-015334 5 RF OUT RF out 6 V supply voltage CC Transparent top view 7 GND ground pad 3 Ordering information Table 3.Ordering information Type number Package Name Description Version BGU7258 HXSON6 plastic thermal enhanced extremely thin small outline SOT1189-1 package no leads 6 terminals body 1.6 x 1.6 x 0.5 mm OM7870 - 5 GHz WLAN evaluation board - BGU7258 All information provided in this document is subject to legal disclaimers. NXP B.V. 2018. All rights reserved. Product data sheet Rev. 3 29 August 2018 2 / 21