DocumentNumber:MD7IC18120N FreescaleSemiconductor Rev. 0, 5/2010 TechnicalData RFLDMOSWidebandIntegrated MD7IC18120NR1 PowerAmplifiers MD7IC18120GNR1 TheMD7IC18120N/GNwidebandintegratedcircuitisdesignedwithon--chip matching that makes it usable from 1805 to 1880 MHz. This multi--stage structureis ratedfor 26to32Voltoperationandcovers alltypicalcellularbase stationmodulationformats. 1805--1880MHz,30WAVG.,28V TypicalDoherty Single--Carrier W--CDMA Performance: V =28Volts, DD SINGLEW--CDMA I =70mA,I = 160mA, I = 500mA, V =1.7Vdc,P = DQ1A DQ1B DQ2B GS2A out RFLDMOSWIDEBAND 30Watts Avg., IQ MagnitudeClipping, ChannelBandwidth= 3.84MHz, INTEGRATEDPOWERAMPLIFIERS Input SignalPAR = 7.5dB 0.01%Probability onCCDF. G PAE OutputPAR ps Frequency (dB) (%) (dB) CASE1866--02 1805MHz 25.7 36.7 6.9 TO--270WBL--16 PLASTIC 1840MHz 25.7 36.3 6.9 MD7IC18120NR1 1880MHz 25.8 35.3 6.7 Capableof Handling10:1VSWR, 32Vdc, 1840MHz, 140Watts CW Output Power Stableintoa5:1VSWR. AllSpurs Below --60dBc 100Watts CW P out Typical P 1dB CompressionPoint 120Watts CW out Features CASE1867--02 ProductionTestedinaSymmetricalDoherty Configuration TO--270WBL--16GULL 100%PAR Testedfor GuaranteedOutput Power Capability PLASTIC CharacterizedwithLarge--SignalLoad--PullParameters andCommon MD7IC18120GNR1 SourceS--Parameters On--ChipMatching(50Ohm Input, DC Blocked) (1) IntegratedQuiescent Current TemperatureCompensationwithEnable/DisableFunction IntegratedESD Protection Greater NegativeGate--SourceVoltage Rangefor ImprovedClass C Operation 225C CapablePlastic Package RoHSCompliant InTapeandReel. R1Suffix = 500Units per 44mm, 13inchReel. V DS1A N.C. 1 V V 2 QuiescentCurrent DS1A GS2A V 3 (1) GS2A TemperatureCompensation V GS1A V 4 16 GS1A RF /V outA DS2A N.C. 5 (2) RF 6 PEAKING inA N.C. 7 RF RF /V inA outA DS2A N.C. 8 RF 9 inB N.C. 10 15 RF /V outB DS2B V 11 GS1B V 12 RF RF /V inB GS2B outB DS2B V 13 DS1B (2) CARRIER N.C. 14 (TopView) V GS1B QuiescentCurrent (1) V TemperatureCompensation Note: Exposed backside of the package is GS2B thesourceterminalforthetransistors. V DS1B Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J CW Operation T =25C CW 175 W C Derateabove25C 1.5 W/C InputPower P 30 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit FinalDohertyApplication ThermalResistance,JunctiontoCase R C/W JC CaseTemperature78C,P =30W CW,1880MHz out Stage1A,28Vdc,I =70mA 4.5 DQ1A Stage1B,28Vdc,I =160mA 4.5 DQ1B Stage2A,28Vdc,V =1.7Vdc 0.88 G2A Stage2B,28Vdc,I =500mA 0.88 DQ2B Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) III(Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat