DocumentNumber:MD7IC2250N FreescaleSemiconductor Rev. 0, 12/2010 TechnicalData RFLDMOSWidebandIntegrated MD7IC2250NR1 PowerAmplifiers The MD7IC2250N wideband integrated circuit is designed with on--chip MD7IC2250GNR1 matching that makes it usablefrom 2000to 2200MHz. This multi--stage MD7IC2250NBR1 structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats. TypicalSingle--Carrier W--CDMA Performance: V =28Volts, DD I =80mA,I = 520mA, P = 5.3Watts Avg., DQ1(A+B) DQ2(A+B) out 2110--2170MHz,5.3WAVG.,28V IQ MagnitudeClipping, ChannelBandwidth= 3.84MHz, Input Signal SINGLEW--CDMA PAR = 7.5dB 0.01%Probability onCCDF. RFLDMOSWIDEBAND G PAE ACPR INTEGRATEDPOWERAMPLIFIERS ps Frequency (dB) (%) (dBc) 2110MHz 31.2 17.0 --48.3 CASE1618--02 TO--270WB--14 2140MHz 31.1 16.8 --49.3 PLASTIC 2170MHz 31.1 16.8 --50.1 MD7IC2250NR1 Capableof Handling10:1VSWR, 32Vdc, 2140MHz, 63Watts CW Output Power (3dB Input Overdrivefrom RatedP ) out CASE1621--02 Typical P 1dB CompressionPoint 54Watts CW out TO--270WB--14GULL Features PLASTIC MD7IC2250GNR1 CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters andCommonSourceS--Parameters On--ChipMatching(50Ohm Input, DC Blocked) CASE1617--02 IntegratedQuiescent Current TemperatureCompensationwith TO--272WB--14 (1) Enable/DisableFunction PLASTIC IntegratedESD Protection MD7IC2250NBR1 Designedfor DigitalPredistortionError CorrectionSystems Optimizedfor Doherty Applications 225C CapablePlastic Package RoHSCompliant InTapeandReel. R1Suffix = 500Units, 44mm TapeWidth, 13inchReel. V DS1A V 1 DS1A V 2 GS2A RF RF /V inA out1 DS2A 14 V 3 GS1A RF /V out1 DS2A RF 4 inA NC 5 V NC 6 GS1A QuiescentCurrent NC 7 (1) V TemperatureCompensation GS2A NC 8 RF 9 13 RF /V inB out2 DS2B V GS1B QuiescentCurrent V 10 GS1B (1) V TemperatureCompensation V 11 GS2B GS2B V 12 DS1B (TopView) RF inB RF /V out2 DS2B Note: Exposed backside of the package is V thesourceterminalforthetransistors. DS1B Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --0.5,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J InputPower P 28 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature74C,5.3W CW,2170MHz Stage1,28Vdc,I =80mA 5.3 DQ1(A+B) Stage2,28Vdc,I =520mA 1.1 DQ2(A+B) CaseTemperature80C,50W CW,2170MHz Stage1,28Vdc,I =80mA 5.0 DQ1(A+B) =520mA Stage2,28Vdc,I 0.95 DQ2(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1A (Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) II (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (4) Stage1 -- OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =1.5Vdc,V =0Vdc) GS DS Stage1 -- OnCharacteristics (4) GateThresholdVoltage V 1.2 2.0 2.7 Vdc GS(th) (V =10Vdc,I =23Adc) DS D GateQuiescentVoltage V 2.7 Vdc GS(Q) (V =28Vdc,I =80mA) DS DQ1(A+B) FixtureGateQuiescentVoltage V 6.0 7.0 8.0 Vdc GG(Q) (V =28Vdc,I =80mA,MeasuredinFunctionalTest) DD DQ1(A+B) 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat