X-On Electronics has gained recognition as a prominent supplier of MD7IC2050GNR1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. MD7IC2050GNR1 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

MD7IC2050GNR1 NXP

MD7IC2050GNR1 electronic component of NXP
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Part No.MD7IC2050GNR1
Manufacturer: NXP
Category: RF Amplifier
Description: RF Amp Module Dual GP Amp 2.05GHz 32V 15-Pin TO-270 W GULL T/R
Datasheet: MD7IC2050GNR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 96.3986 ea
Line Total: USD 96.4 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
   
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We are delighted to provide the MD7IC2050GNR1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MD7IC2050GNR1 and other electronic components in the RF Amplifier category and beyond.

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Document Number: MD7IC2050N Freescale Semiconductor Rev. 1, 5/2010 Technical Data RF LDMOS Wideband Integrated MD7IC2050NR1 Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on- chip MD7IC2050GNR1 matching that makes it usable from 1750- 2050 MHz. This multi- stage MD7IC2050NBR1 structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Typical Doherty Single-Carrier W-CDMA Performance: V = 28 Volts, DD I = I = 30 mA, I = 230 mA, V = 1.4 Vdc, P = 10 Watts DQ1A DQ1B DQ2A GS2B out 1880-2100 MHz, 10 W AVG., 28 V Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal SINGLE W-CDMA PAR = 9.9 dB 0.01% Probability on CCDF. RF LDMOS WIDEBAND G PAE Output PAR ACPR ps INTEGRATED POWER AMPLIFIERS Frequency (dB) (%) (dB) (dBc) 2025 MHz 30.5 34.7 8.7 -37.4 Capable of Handling 5:1 VSWR, 32 Vdc, 2017.5 MHz, 79 Watts CW CASE 1618-02 Output Power (3 dB Input Overdrive from Rated P ) out TO-270 WB-14 PLASTIC Stable into a 5:1 VSWR. All Spurs Below -60 dBc 20 Watts to 80 Watts MD7IC2050NR1 CW P out Typical P 3 dB Compression Point 74 Watts CW out 1880 MHz = 28 Volts, CASE 1621-02 Typical Doherty Single-Carrier W-CDMA Performance: V DD TO-270 WB-14 GULL I = I = 30 mA, I = 230 mA, V = 1.4 Vdc, P = 10 Watts DQ1A DQ1B DQ2A GS2B out PLASTIC Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal MD7IC2050GNR1 PAR = 9.9 dB 0.01% Probability on CCDF. G PAE Output PAR ACPR ps Frequency (dB) (%) (dB) (dBc) 1880 MHz 30.3 35.2 8.6 -34.9 1900 MHz 30.2 34.9 8.6 -36.3 CASE 1617-02 1920 MHz 30.1 34.8 8.7 -36.9 TO-272 WB-14 PLASTIC Features MD7IC2050NBR1 100% PAR Tested for Guaranteed Output Power Capability Production Tested in a Symmetrical Doherty Configuration Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters On-Chip Matching (50 Ohm Input, DC Blocked) Integrated Quiescent Current Temperature Compensation with (1) Enable/Disable Function Integrated ESD Protection 225C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to V DS1A (2) CARRIER V 1 DS1A V 2 GS2A RF RF /V inA out1 DS2A 14 V 3 GS1A RF /V out1 DS2A RF 4 inA NC 5 NC 6 V GS1A Quiescent Current NC 7 (1) V Temperature Compensation GS2A 8 NC RF 9 13 RF /V inB out2 DS2B V GS1B Quiescent Current V 10 GS1B (1) V Temperature Compensation V 11 GS2B GS2B V 12 DS1B (2) PEAKING (Top View) RF inB RF /V out2 DS2B Note: Exposed backside of the package is V the source terminal for the transistors. DS1B Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
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NXP / Freescale
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NXP Semiconductors
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