MHL19338N NXP

Document Number: MHL19338N Freescale Semiconductor Rev. 7, 12/2006 Technical Data Replaced by MHL19338NN. There are no form, fit or function changes with this part replacement. MHL19338N PCS Band RF Linear LDMOS Amplifier Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding 1900-2000 MHz linearity and gain. In addition, the excellent group delay and phase linearity 4.0 W, 30 dB characteristics are ideal for digital modulation systems, such as TDMA and RF LINEAR LDMOS AMPLIFIER CDMA. Third Order Intercept: 46 dBm Typ Power Gain: 30 dB Typ ( f = 1960 MHz) Input VSWR 1.5:1 Features Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications N Suffix Indicates Lead-Free Terminations CASE 301AP-02, STYLE 1 Table 1. Absolute Maximum Ratings (T = 25C unless otherwise noted) C Rating Symbol Value Unit DC Supply Voltage V 30 Vdc DD RF Input Power P +10 dBm in Storage Temperature Range T - 40 to +100 C stg Operating Case Temperature Range T - 20 to +100 C C Table 2. Electrical Characteristics (V = 28 Vdc, T = 25C 50 System) DD C Characteristic Symbol Min Typ Max Unit Supply Current I 500 525 mA DD Power Gain (f = 1960 MHz) G 29 30 32 dB p Gain Flatness (f = 1900 - 2000 MHz) G 0.1 0.4 dB F Power Output 1 dB Compression (f = 1950 MHz) P1dB 35 36 dBm Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz) ITO 45 46 dBm Noise Figure (f = 2000 MHz) NF 4.2 4.5 dB NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Freescale Semiconductor, Inc., 2006, 2007. All rights reserved. MHL19338N RF Device Data Freescale Semiconductor 1 ARCHIVE INFORMATION ARCHIVE INFORMATIONPACKAGE DIMENSIONS 2X Q A A M M M 0.008 (0.20) T S A G M M B S 0.020 (0.51) T A NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. R S 2. CONTROLLING DIMENSION: INCH. J 3. DIMENSION TO CENTER OF LEADS. 12 34 K INCHES MILLIMETERS DIM MIN MAX MIN MAX W A 1.760 1.780 44.70 45.21 4X D B 1.370 1.390 34.80 35.31 N C 0.245 0.265 6.22 6.73 M 0.020 (0.51) T B M D 0.017 0.023 0.43 0.58 L E 0.080 0.100 2.03 2.54 H F 0.086 BSC 2.18 BSC G 1.650 BSC 41.91 BSC H 1.290 BSC 32.77 BSC F J 0.266 0.280 6.76 7.11 E K 0.125 0.165 3.18 4.19 L 0.990 BSC 25.15 BSC T N 0.390 BSC 9.91 BSC P 0.008 0.013 0.20 0.33 C Q 0.118 0.132 3.00 3.35 SEATING R 0.535 0.555 13.59 14.10 4X P PLANE S 0.445 0.465 11.30 11.81 M 0.020 (0.51) T W 0.090 BSC 2.29 BSC STYLE 1: PIN 1. RF INPUT 2. VDD1 3. VDD2 4. RF OUTPUT CASE: GROUND CASE 301AP-02 ISSUE E MHL19338N RF Device Data Freescale Semiconductor 2 ARCHIVE INFORMATION ARCHIVE INFORMATION