2SJ646 Ordering number : ENN8282 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ646 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V --30 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I --8 A D Drain Current (Pulse) I PW 10s, duty cycle 1% --32 A DP 1W Allowable Power Dissipation P D Tc=25C15W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--4A 3.3 5.5 S DS D R (on)1 I =--4A, V =--10V 58 75 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--2A, V =--4.5V 97 136 m DS D GS R (on)3 I =--2A, V =--4V 110 154 m DS D GS Input Capacitance Ciss V =--10V, f=1MHz 510 pF DS Output Capacitance Coss V =--10V, f=1MHz 115 pF DS Reverse Transfer Capacitance Crss V =--10V, f=1MHz 78 pF DS Continued on next page. 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Jan-2011, Rev. 0 2SJ646/D2SJ646 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Turn-ON Delay Time t (on) See specified Test Circuit. 11 ns d Rise Time t See specified Test Circuit. 40 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 40 ns d Fall Time t See specified Test Circuit. 30 ns f Total Gate Charge Qg V =--10V, V =--10V, I =--8A 11 nC DS GS D Gate-to-Source Charge Qgs V =--10V, V =--10V, I =--8A 2.4 nC DS GS D Gate-to-Drain Miller Charge Qgd V =--10V, V =--10V, I =--8A 1.7 nC DS GS D Diode Forward Voltage V I =--8A, V =0V --1.0 --1.2 V SD S GS Package Dimensions Package Dimensions unit : mm unit : mm 7518-004 7003-004 6.5 2.3 6.5 2.3 5.0 0.5 5.0 0.5 4 4 0.5 0.85 0.85 0.7 1.2 12 3 0.6 0 to 0.2 0.6 0.5 1 : Gate 1.2 1 : Gate 2 : Drain 2 : Drain 12 3 3 : Source 3 : Source 4 : Drain 2.3 2.3 4 : Drain SANYO : TP-FA 2.3 2.3 SANYO : TP Switching Time Test Circuit V = --15V DD V IN 0V I = --4A D --10V R =3.75 L D V OUT V IN PW=10s D.C.1% G P.G 50 2SJ646 S Rev.0 I Page 2 of 4 I www.onsemi.com 0.8 5.5 1.6 1.5 7.5 7.0 0.8 5.5 1.5 2.5 7.0 1.2