X-On Electronics has gained recognition as a prominent supplier of 2SJ661-1E MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2SJ661-1E MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2SJ661-1E ON Semiconductor

2SJ661-1E electronic component of ON Semiconductor
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See Product Specifications
Part No.2SJ661-1E
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET PCH 4V DRIVE SERIES
Datasheet: 2SJ661-1E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0

Multiples : 250
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 4.023
10 : USD 3.35
100 : USD 2.8125
450 : USD 2.364
900 : USD 2.052
2700 : USD 1.944
5400 : USD 1.944
10350 : USD 1.932
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SJ661-1E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SJ661-1E and other electronic components in the MOSFETs category and beyond.

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Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET 2SJ661 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 E 250 mJ AS Avalanche Current *2 I --38 A AV Note : *1 V =--30V, L=200H, I =--38A (Fig.1) DD AV *2 L200H, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--60V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--19A 18 31 S DS D R (on)1 I =--19A, V =--10V 29.5 39 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--19A, V =--4V 40 56 m DS D GS Input Capacitance Ciss 4360 pF Output Capacitance Coss V =--20V, f=1MHz 470 pF DS Reverse Transfer Capacitance Crss 335 pF Turn-ON Delay Time t (on) 33 ns d Rise Time t 285 ns r See Fig.2 Turn-OFF Delay Time t (off) 295 ns d Fall Time t 195 ns f Total Gate Charge Qg 80 nC Gate-to-Source Charge Qgs V =--30V, V =--10V, I =--38A 15 nC DS GS D Gate-to-Drain Miller Charge Qgd 12 nC Diode Forward Voltage V I =--38A, V =0V --1.0 --1.2 V SD S GS Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit V V = --30V IN DD L 0V --10V 50 I = --19A RG D V IN R =1.58 L D V OUT 2SJ661 PW=10s 0V D.C.1% V 50 DD --10V G 2SJ661 P.G 50 S Ordering Information Device Package Shipping memo 2SJ661-1E TO-262-3L 50pcs./magazine Pb Free 2SJ661-DL-1E TO-263-2L 800pcs./reel No.8586-2/9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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