2SJ652-1E ON Semiconductor

Ordering number : EN7625A 2SJ652 P-Channel Power MOSFET 2SJ652 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--60V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--14A 18 26 S DS D R (on)1 I =--14A, V =--10V 28.5 38 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--14A, V =--4V 39 55.5 m DS D GS Input Capacitance Ciss 4360 pF Output Capacitance Coss V =--20V, f=1MHz 470 pF DS Reverse Transfer Capacitance Crss 335 pF Turn-ON Delay Time t (on) 33 ns d Rise Time t 210 ns r See Fig.2 Turn-OFF Delay Time t (off) 310 ns d Fall Time t 180 ns f Total Gate Charge Qg 80 nC Gate-to-Source Charge Qgs V =--30V, V =--10V, I =--28A 15 nC DS GS D Gate-to-Drain Miller Charge Qgd 12 nC Diode Forward Voltage V I =--28A, V =0V --0.96 --1.2 V SD S GS Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit V = --30V V IN DD L 0V --10V 50 I = --14A D RG V IN R =2.1 L D V OUT 2SJ652 PW=10s 0V D.C.1% V 50 DD --10V G 2SJ652 P.G 50 S Ordering Information Device Package Shipping memo 2SJ652-1E TO-220F-3SG 50pcs./magazine Pb Free No.7625-2/7