MC74HC573A
Octal 3-State Noninverting
Transparent Latch
HighPerformance SiliconGate CMOS
The MC74HC573A is identical in pinout to the LS573. The devices
MC74HC573A
MAXIMUM RATINGS
Symbol Parameter Value Unit
This device contains protection
circuitry to guard against damage
V DC Supply Voltage (Referenced to GND) 0.5 to +7.0 V
CC
due to high static voltages or electric
V DC Input Voltage (Referenced to GND) 0.5 to V + 0.5 V
in CC
fields. However, precautions must
V DC Output Voltage (Referenced to GND) 0.5 to V + 0.5 V
out CC
be taken to avoid applications of any
I DC Input Current, per Pin 20 mA voltage higher than maximum rated
in
voltages to this highimpedance cir-
I DC Output Current, per Pin 35 mA
out
cuit. For proper operation, V and
in
I DC Supply Current, V and GND Pins 75 mA
CC CC
V should be constrained to the
out
P Power Dissipation in Still Air, SOIC Package 500 mW
range GND (V or V ) V .
D
in out CC
TSSOP Package 450
Unused inputs must always be
tied to an appropriate logic voltage
T Storage Temperature 65 to +150 C
stg
level (e.g., either GND or V ).
CC
T Lead Temperature, 1 mm from Case for 10 Seconds C
L
Unused outputs must be left open.
(TSSOP or SOIC Package) 260
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
Derating: SOIC Package: 7 mW/C from 65 to 125C
TSSOP Package: 6.1 mW/C from 65 to 125C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V DC Supply Voltage (Referenced to GND) 2.0 6.0 V
CC
V , V DC Input Voltage, Output Voltage (Referenced to GND) 0 V V
in out CC
T Operating Temperature, All Package Types 55 +125 C
A
t , t Input Rise and Fall Time V = 2.0 V 0 1000 ns
r f CC
(Figure 1) V = 4.5 V 0 500
CC
V = 6.0 V 0 400
CC
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
55 to
V
CC
25C
V 85C 125C
Symbol Parameter Test Conditions Unit
V Minimum HighLevel Input Voltage V = 0.1 V or V 0.1 V 2.0 1.5 1.5 1.5 V
IH out CC
|I | 20 A 3.0 2.1 2.1 2.1
out
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
V Maximum LowLevel Input Voltage V = 0.1 V or V 0.1 V 2.0 0.5 0.5 0.5 V
IL out CC
3.0 0.9 0.9 0.9
|I | 20 A
out
4.5 1.35 1.35 1.35
6.0 1.8 1 8 1.8
V Minimum HighLevel Output V = V or V 2.0 1.9 1.9 1.9 V
in IH IL
OH
Voltage |I | 20 A 4.5 4.4 4.4 4.4
out
6.0 5.9 5.9 5.9
V = V or V |I | 2.4mA 3.0 2.48 2.34 2.2
in IH IL out
|I | 6.0 mA 4.5 3.98 3.84 3.7
out
|I | 7.8 mA 6.0 5.48 5.34 5.2
out
V Maximum LowLevel Output V = 0.1 V or V 0.1 V 2.0 0.1 0.1 0.1 V
OL out CC
Voltage |I | 20 A 4.5 0.1 0.1 0.1
out
6.0 0.1 0.1 0.1
V = V or V |I | 2.4mA 3.0 0.26 0.33 0.4
in IH IL out
|I | 6.0 mA 4.5 0.26 0.33 0.4
out
|I | 7.8 mA 6.0 0.26 0.33 0.4
out
I Maximum Input Leakage Current V = V or GND 6.0 0.1 1.0 .0 A
in in CC
I Maximum ThreeState Leakage Output in HighImpedance State 6.0 0.5 5.0 10 A
OZ
Current V = V or V
in IL IH
V = V or GND
out CC
I Maximum Quiescent Supply V = V or GND 6.0 4.0 40 160 A
CC in CC
Current (per Package) II I = 0 A
out