BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor
November 2014
BC546 / BC547 / BC548 / BC549 / BC550
NPN Epitaxial Silicon Transistor
Features
Switching and Amplifier
High-Voltage: BC546, V = 65 V
CEO
Low-Noise: BC549, BC550
Complement to BC556, BC557, BC558, BC559, and BC560
TO-92
1
1. Collector 2. Base 3. Emitter
Ordering Information
Part Number Marking Package Packing Method
BC546ABU BC546A TO-92 3L Bulk
BC546ATA BC546A TO-92 3L Ammo
BC546BTA BC546B TO-92 3L Ammo
BC546BTF BC546B TO-92 3L Tape and Reel
BC546CTA BC546C TO-92 3L Ammo
BC547ATA BC547A TO-92 3L Ammo
BC547B BC547B TO-92 3L Bulk
BC547BBU BC547B TO-92 3L Bulk
BC547BTA BC547B TO-92 3L Ammo
BC547BTF BC547B TO-92 3L Tape and Reel
BC547CBU BC547C TO-92 3L Bulk
BC547CTA BC547C TO-92 3L Ammo
BC547CTFR BC547C TO-92 3L Tape and Reel
BC548BU BC548 TO-92 3L Bulk
BC548BTA BC548B TO-92 3L Ammo
BC548CTA BC548C TO-92 3L Ammo
BC549BTA BC549B TO-92 3L Ammo
BC549BTF BC549B TO-92 3L Tape and Reel
BC549CTA BC549C TO-92 3L Ammo
BC550CBU BC550C TO-92 3L Bulk
BC550CTA BC550C TO-92 3L Ammo
2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 1 BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
BC546 80
V Collector-Base Voltage BC547 / BC550 50 V
CBO
BC548 / BC549 30
BC546 65
V Collector-Emitter Voltage BC547 / BC550 45 V
CEO
BC548 / BC549 30
BC546 / BC547 6
V Emitter-Base Voltage V
EBO
BC548 / BC549 / BC550 5
I Collector Current (DC) 100 mA
C
P Collector Power Dissipation 500 mW
C
T Junction Temperature 150 C
J
T Storage Temperature Range -65 to +150 C
STG
Electrical Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Conditions Min. Typ. Max. Unit
I Collector Cut-Off Current V = 30 V, I = 0 15 nA
CBO CB E
h DC Current Gain V = 5 V, I = 2 mA 110 800
FE CE C
I = 10 mA, I = 0.5 mA 90 250
Collector-Emitter Saturation
C B
V (sat) mV
CE
Voltage
I = 100 mA, I = 5 mA 250 600
C B
I = 10 mA, I = 0.5 mA 700
C B
V (sat) Base-Emitter Saturation Voltage mV
BE
I = 100 mA, I = 5 mA 900
C B
V = 5 V, I = 2 mA 580 660 700
CE C
V (on) Base-Emitter On Voltage mV
BE
V = 5 V, I = 10 mA 720
CE C
V = 5 V, I = 10 mA,
CE C
f Current Gain Bandwidth Product 300 MHz
T
f = 100 MHz
C Output Capacitance V = 10 V, I = 0, f = 1 MHz 3.5 6.0 pF
ob CB E
C Input Capacitance V = 0.5 V, I = 0, f = 1 MHz 9 pF
ib EB C
BC546 / BC547 / BC548 2.0 10.0
= 5 V, I = 200 A,
V
CE C
f = 1 kHz, R = 2 k
BC549 / BC550 1.2 4.0
G
Noise
NF dB
Figure
BC549 1.4 4.0
V = 5 V, I = 200 A,
CE C
R = 2 k, f = 30 to 15000 MHz
BC550 G 1.4 3.0
h Classification
FE
Classification A B C
h 110 ~ 220 200 ~ 450 420 ~ 800
FE
2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 2