X-On Electronics has gained recognition as a prominent supplier of BC817-16LT1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC817-16LT1 Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC817-16LT1 ON Semiconductor

BC817-16LT1 electronic component of ON Semiconductor
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Part No.BC817-16LT1
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 500mA 50V NPN
Datasheet: BC817-16LT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
13889: USD 0.0318 ea
Line Total: USD 441.67 
Availability - 0
MOQ: 13889  Multiples: 13889
Pack Size: 13889
Availability Price Quantity
0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 230
Multiples : 230
230 : USD 0.3003
500 : USD 0.2593
1000 : USD 0.2231
2500 : USD 0.1969
5000 : USD 0.1386
10000 : USD 0.1134
25000 : USD 0.0895
50000 : USD 0.0882

0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 13889
Multiples : 13889
13889 : USD 0.0318

   
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We are delighted to provide the BC817-16LT1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC817-16LT1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors www.onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 1 BASE AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2 Compliant EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector Emitter Voltage V 45 V CEO 2 Collector Base Voltage V 50 V CBO SOT23 Emitter Base Voltage V 5.0 V EBO CASE 318 Collector Current Continuous I 500 mAdc STYLE 6 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Total Device Dissipation FR5 Board, P D (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C 6x M Thermal Resistance, R 556 C/W JA JunctiontoAmbient 1 Total Device Dissipation P D Alumina Substrate, (Note 2) 6x = Device Code T = 25C 300 mW A x = A, B, or C Derate above 25C 2.4 mW/C M = Date Code* Thermal Resistance, 417 C/W R =PbFree Package JA JunctiontoAmbient (Note: Microdot may be in either location) Junction and Storage Temperature T , T 65 to +150 C J stg *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. FR5 = 1.0 x 0.75 x 0.062 in. See detailed ordering and shipping information in the package 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 1997 1 Publication Order Number: September, 2018 Rev. 16 BC81716LT1/DBC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V 45 V (BR)CEO (I = 10 mA) C Collector Emitter Breakdown Voltage V 50 V (BR)CES (V = 0, I = 10 A) EB C Emitter Base Breakdown Voltage V 5.0 V (BR)EBO (I = 1.0 A) E Collector Cutoff Current I CBO (V = 20 V) 100 nA CB (V = 20 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 100 mA, V = 1.0 V) BC81716, SBC81716 100 250 C CE BC81725, SBC81725 160 400 BC81740, SBC81740 250 600 (I = 500 mA, V = 1.0 V) 40 C CE Collector Emitter Saturation Voltage V 0.7 V CE(sat) (I = 500 mA, I = 50 mA) C B Base Emitter On Voltage V 1.2 V BE(on) (I = 500 mA, V = 1.0 V) C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 10 pF obo (V = 10 V, f = 1.0 MHz) CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Specific Marking Package Shipping BC81716LT1G 3000 / Tape & Reel NSVBC81716LT1G SOT23 6A (PbFree) BC81716LT3G 10,000 / Tape & Reel SBC81716LT3G BC81725LT1G 3000 / Tape & Reel SBC81725LT1G SOT23 6B (PbFree) BC81725LT3G 10,000 / Tape & Reel SBC81725LT3G BC81740LT1G 3000 / Tape & Reel SBC81740LT1G SOT23 6C (PbFree) BC81740LT3G 10,000 / Tape & Reel SBC81740LT3G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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