BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors www.onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 1 BASE AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2 Compliant EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector Emitter Voltage V 45 V CEO 2 Collector Base Voltage V 50 V CBO SOT23 Emitter Base Voltage V 5.0 V EBO CASE 318 Collector Current Continuous I 500 mAdc STYLE 6 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Total Device Dissipation FR5 Board, P D (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C 6x M Thermal Resistance, R 556 C/W JA JunctiontoAmbient 1 Total Device Dissipation P D Alumina Substrate, (Note 2) 6x = Device Code T = 25C 300 mW A x = A, B, or C Derate above 25C 2.4 mW/C M = Date Code* Thermal Resistance, 417 C/W R =PbFree Package JA JunctiontoAmbient (Note: Microdot may be in either location) Junction and Storage Temperature T , T 65 to +150 C J stg *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. FR5 = 1.0 x 0.75 x 0.062 in. See detailed ordering and shipping information in the package 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 1997 1 Publication Order Number: September, 2018 Rev. 16 BC81716LT1/DBC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V 45 V (BR)CEO (I = 10 mA) C Collector Emitter Breakdown Voltage V 50 V (BR)CES (V = 0, I = 10 A) EB C Emitter Base Breakdown Voltage V 5.0 V (BR)EBO (I = 1.0 A) E Collector Cutoff Current I CBO (V = 20 V) 100 nA CB (V = 20 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 100 mA, V = 1.0 V) BC81716, SBC81716 100 250 C CE BC81725, SBC81725 160 400 BC81740, SBC81740 250 600 (I = 500 mA, V = 1.0 V) 40 C CE Collector Emitter Saturation Voltage V 0.7 V CE(sat) (I = 500 mA, I = 50 mA) C B Base Emitter On Voltage V 1.2 V BE(on) (I = 500 mA, V = 1.0 V) C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 10 pF obo (V = 10 V, f = 1.0 MHz) CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Specific Marking Package Shipping BC81716LT1G 3000 / Tape & Reel NSVBC81716LT1G SOT23 6A (PbFree) BC81716LT3G 10,000 / Tape & Reel SBC81716LT3G BC81725LT1G 3000 / Tape & Reel SBC81725LT1G SOT23 6B (PbFree) BC81725LT3G 10,000 / Tape & Reel SBC81725LT3G BC81740LT1G 3000 / Tape & Reel SBC81740LT1G SOT23 6C (PbFree) BC81740LT3G 10,000 / Tape & Reel SBC81740LT3G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2