We are the renowned BC848CLT1G Bipolar Transistors - BJT seller and distributer in the USA, India, Europe, Australia, and beyond. BC848CLT1G Bipolar Transistors - BJT is a manufacturer from ON Semiconductor. X-ON Electronics Components provides affordable electronic Bipolar Transistors - BJT in the USA.

BC848CLT1G

BC848CLT1G electronic component of ON Semiconductor
Part No.BC848CLT1G
Manufacturer: ON Semiconductor
Category:Bipolar Transistors - BJT
Description: Trans GP BJT NPN 30V 0.1A 3-Pin SOT-23 T/R
Datasheet: BC848CLT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0494 ea
Line Total: USD 0.99

6499 - Global Stock
Ships to you between
Wed. 29 May to Tue. 04 Jun
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
1917 - WHS 1


Ships to you between Wed. 29 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 0.1295
10 : USD 0.0939
25 : USD 0.0928
100 : USD 0.0467
250 : USD 0.0461
500 : USD 0.0456
1000 : USD 0.0274

116 - WHS 2


Ships to you between
Wed. 05 Jun to Mon. 10 Jun

MOQ : 20
Multiples : 20
20 : USD 0.0383
200 : USD 0.0302
600 : USD 0.0258
3000 : USD 0.0231
9000 : USD 0.0208
21000 : USD 0.0194

6499 - WHS 3


Ships to you between Wed. 29 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 0.13
10 : USD 0.091
100 : USD 0.0481
500 : USD 0.0312
789 : USD 0.0208

1917 - WHS 4


Ships to you between Wed. 29 May to Tue. 04 Jun

MOQ : 532
Multiples : 1
532 : USD 0.0276

710 - WHS 5


Ships to you by Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 0.364
50 : USD 0.182
100 : USD 0.1638
500 : USD 0.1365
1000 : USD 0.1228

We proudly offer the BC848CLT1G Bipolar Transistors - BJT at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the BC848CLT1G Bipolar Transistors - BJT.
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
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Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
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DATA SHEET www.onsemi.com COLLECTOR General Purpose 3 Transistors 1 BASE NPN Silicon 2 EMITTER BC846ALT1G Series Features 3 Moisture Sensitivity Level: 1 1 ESD Rating Human Body Model: > 4000 V 2 ESD Rating Machine Model: > 400 V SOT23 S and NSV Prefix for Automotive and Other Applications Requiring CASE 318 Unique Site and Control Change Requirements AECQ101 STYLE 6 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM MAXIMUM RATINGS XX M Rating Symbol Value Unit Collector-Emitter Voltage V Vdc CEO 1 BC846 65 BC847, BC850 45 XX = Device Code BC848, BC849 30 M = Date Code* =PbFree Package CollectorBase Voltage V Vdc CBO BC846 80 (Note: Microdot may be in either location) BC847, BC850 50 *Date Code orientation and/or overbar may BC848, BC849 30 vary depending upon manufacturing location. EmitterBase Voltage V Vdc EBO BC846 6.0 BC847, BC850 6.0 ORDERING INFORMATION BC848, BC849 5.0 See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. Collector Current Continuous I 100 mAdc C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, P 225 mW D (Note 1) T = 25C A Derate above 25C 1.8 mW/C Thermal Resistance, R 556 C/W JA JunctiontoAmbient (Note 1) Total Device Dissipation P 300 mW D Alumina Substrate (Note 2) T = 25C A Derate above 25C 2.4 mW/C Thermal Resistance, R 417 C/W JA JunctiontoAmbient (Note 2) Junction and Storage T , T 55 to C J stg Temperature Range +150 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: August, 2021 Rev. 19 BC846ALT1/DBC846ALT1G Series ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage BC846A, B, C V 65 V (BR)CEO (I = 10 mA) BC847A, B, C, BC850B, C 45 C BC848A, B, C, BC849B, C 30 Collector Emitter Breakdown Voltage BC846A, B, C V 80 V (BR)CES 50 (I = 10 A, V = 0) BC847A, B, C BC850B, C C EB 30 BC848A, B, C, BC849B, C Collector Base Breakdown Voltage BC846A, B, C V 80 V (BR)CBO (I = 10 A) BC847A, B, C, BC850B, C 50 C BC848A, B, C, BC849B, C 30 Emitter Base Breakdown Voltage BC846A, B, C V 6.0 V (BR)EBO 6.0 (I = 1.0 A) BC847A, B, C, BC850B, C E 5.0 BC848A, B, C, BC849B, C Collector Cutoff Current (V = 30 V) I 15 nA CB CBO (V = 30 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain BC846A, BC847A, BC848A h 90 FE (I = 10 A, V = 5.0 V) BC846B, BC847B, BC848B 150 C CE BC846C, BC847C, BC848C 270 (I = 2.0 mA, V = 5.0 V) BC846A, BC847A, BC848A 110 180 220 C CE BC846B, BC847B, BC848B, 200 290 450 BC849B, BC850B 420 520 800 BC846C, BC847C, BC848C, BC849C, BC850C Collector Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.25 V C B CE(sat) Collector Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.6 C B Base Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.7 V C B BE(sat) Base Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.9 C B Base Emitter Voltage (I = 2.0 mA, V = 5.0 V) V 580 660 700 mV C CE BE(on) Base Emitter Voltage (I = 10 mA, V = 5.0 V) 770 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance (V = 10 V, f = 1.0 MHz) C 4.5 pF CB obo Noise Figure (I = 0.2 mA, NF dB C V = 5.0 Vdc, R = 2.0 k , BC846A,B,C, BC847A,B,C, BC848A,B,C 10 CE S f = 1.0 kHz, BW = 200 Hz) BC849B,C, BC850B,C 4.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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