General Purpose Transistors NPN Silicon BC846ALT1G Series Features Moisture Sensitivity Level: 1 www.onsemi.com ESD Rating Human Body Model: > 4000 V ESD Rating Machine Model: > 400 V COLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements AECQ101 1 Qualified and PPAP Capable BASE These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2 Compliant EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector-Emitter Voltage V Vdc CEO BC846 65 1 BC847, BC850 45 2 BC848, BC849 30 SOT23 CollectorBase Voltage V Vdc CBO CASE 318 BC846 80 STYLE 6 BC847, BC850 50 BC848, BC849 30 MARKING DIAGRAM EmitterBase Voltage V Vdc EBO BC846 6.0 BC847, BC850 6.0 BC848, BC849 5.0 XX M Collector Current Continuous I 100 mAdc C 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be XX = Device Code assumed, damage may occur and reliability may be affected. M = Date Code* =PbFree Package THERMAL CHARACTERISTICS (Note: Microdot may be in either location) Characteristic Symbol Max Unit *Date Code orientation and/or overbar may Total Device Dissipation FR5 Board, P 225 mW D vary depending upon manufacturing location. (Note 1) T = 25C A Derate above 25C 1.8 mW/C ORDERING INFORMATION Thermal Resistance, R 556 C/W JA See detailed ordering and shipping information in the package JunctiontoAmbient (Note 1) dimensions section on page 12 of this data sheet. Total Device Dissipation P 300 mW D Alumina Substrate (Note 2) T = 25C A Derate above 25C 2.4 mW/C Thermal Resistance, R 417 C/W JA JunctiontoAmbient (Note 2) Junction and Storage T , T 55 to C J stg Temperature Range +150 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: December, 2019 Rev. 18 BC846ALT1/DBC846ALT1G Series ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage BC846A, B, C V 65 V (BR)CEO (I = 10 mA) BC847A, B, C, BC850B, C 45 C BC848A, B, C, BC849B, C 30 Collector Emitter Breakdown Voltage BC846A, B, C V 80 V (BR)CES 50 (I = 10 A, V = 0) BC847A, B, C BC850B, C C EB 30 BC848A, B, C, BC849B, C Collector Base Breakdown Voltage BC846A, B, C V 80 V (BR)CBO (I = 10 A) BC847A, B, C, BC850B, C 50 C BC848A, B, C, BC849B, C 30 Emitter Base Breakdown Voltage BC846A, B, C V 6.0 V (BR)EBO 6.0 (I = 1.0 A) BC847A, B, C, BC850B, C E 5.0 BC848A, B, C, BC849B, C Collector Cutoff Current (V = 30 V) I 15 nA CB CBO (V = 30 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain BC846A, BC847A, BC848A h 90 FE (I = 10 A, V = 5.0 V) BC846B, BC847B, BC848B 150 C CE BC846C, BC847C, BC848C 270 (I = 2.0 mA, V = 5.0 V) BC846A, BC847A, BC848A 110 180 220 C CE BC846B, BC847B, BC848B, 200 290 450 BC849B, BC850B 420 520 800 BC846C, BC847C, BC848C, BC849C, BC850C Collector Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.25 V C B CE(sat) Collector Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.6 C B Base Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.7 V C B BE(sat) Base Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.9 C B Base Emitter Voltage (I = 2.0 mA, V = 5.0 V) V 580 660 700 mV C CE BE(on) Base Emitter Voltage (I = 10 mA, V = 5.0 V) 770 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance (V = 10 V, f = 1.0 MHz) C 4.5 pF CB obo Noise Figure (I = 0.2 mA, NF dB C V = 5.0 Vdc, R = 2.0 k , BC846A,B,C, BC847A,B,C, BC848A,B,C 10 CE S f = 1.0 kHz, BW = 200 Hz) BC849B,C, BC850B,C 4.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2