DA121TT1G ON Semiconductor

DA121TT1G Silicon Switching Diode Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant DA121TT1G ELECTRICALCHARACTERISTICS (T =25 C unless otherwise noted) A Characteristic Symbol Min Max Unit Forward Voltage -- V mV F (I =1.0mA) -- 715 F (I =10mA) -- 866 F (I =50mA) -- 1000 F (I = 150 mA) -- 1250 F Reverse Current -- I mA R (V =75V) -- 1.0 R (V =75V,T = 150 C) -- 50 R J (V =25V,T = 150 C) -- 30 R J Capacitance -- (V =0,f=1.0MHz) C -- 2.0 pF R D Reverse Recovery Time -- (I =I =10mA,R =50 ) (Figure 1) t -- 6.0 ns F R L rr Stored Charge -- (I =10mAtoV =6.0V,R = 500 ) (Figure 2) QS -- 45 PC F R L Forward Recovery Voltage -- (I =10mA,t =20ns)(Figure3) V -- 1.75 V F r FR 1nsMAX DUT 500 t t rr 10% t if 50 DUTYCYCLE=2% 90% V F I rr 100ns Figure1.ReverseRecoveryTimeEquivalentTestCircuit DUT BAW62 V 500 C V 20nsMAX CM D1 243pF 100K t 10% Qa V = CM C DUTYCYCLE=2% OSCILLOSCOPE R 10M C 7pF t 90% V f 400ns Figure2.RecoveryChargeEquivalentTestCircuit V 120ns 1K 450 V 90% DUT 50 V fr t 10% DUTYCYCLE=2% 2nsMAX Figure3.ForwardRecoveryVoltageEquivalentTestCircuit