DAN222T1G ON Semiconductor

DAN222, NSVDAN222 Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT416/SC75 package which is designed DAN222, NSVDAN222 ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current I V = 70 V 0.1 Adc R R Forward Voltage V I = 100 mA 1.2 Vdc F F Reverse Breakdown Voltage V I = 100 A 80 Vdc R R Diode Capacitance C V = 6.0 V, f = 1.0 MHz 3.5 pF D R Reverse Recovery Time t (Note 2) I = 5.0 mA, V = 6.0 V, R = 100 , I = 0.1 I 4.0 ns rr F R L rr R 2. t Test Circuit on following page. rr TYPICAL ELECTRICAL CHARACTERISTICS 10 100 T = 150C A T = 85C A T = 125C A 1.0 10 T = - 40C A T = 85C A 0.1 T = 55C 1.0 T = 25C A A 0.01 T = 25C A 0.1 0.001 50 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Forward Voltage Figure 2. Reverse Current 1.0 0.9 0.8 0.7 0.6 0 24 6 8 V , REVERSE VOLTAGE (VOLTS) R Figure 3. Diode Capacitance