MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G Monolithic Dual Switching Diodes www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SOT23 (TO236AB) These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 318 Compliant STYLE 9 ANODE 1 MAXIMUM RATINGS (EACH DIODE) 3 2 CATHODE Rating Symbol Value Unit ANODE Peak Reverse Voltage V 75 Vdc RM MARKING DIAGRAM D.C. Reverse Voltage V Vdc R MMBD2837LT1G, SMMBD2837LT1G 30 MMBD2838LT1G 50 xxx M Peak Forward Current I 450 mAdc FM 300 1 Average Rectified Current I 150 mAdc O 100 xxx = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the A5 = MMBD2837LT1G, device. If any of these limits are exceeded, device functionality should not be SMMBD2837LT1G assumed, damage may occur and reliability may be affected. MA6 = MMBD2838LT1G M = Date Code* = PbFree Package THERMAL CHARACTERISTICS (Note: Microdot may be in either location) Rating Symbol Value Unit *Date Code orientation and/or overbar may Total Device Dissipation FR5 Board P 225 mW D vary depending upon manufacturing location. (Note 1) T = 25C A Derate above 25C 1.8 mW/C ORDERING INFORMATION Thermal Resistance, R C/W JA JunctiontoAmbient 556 Device Package Shipping Total Device Dissipation Alumina P 300 mW D MMBD2837LT1G SOT23 3,000 / Substrate, (Note 2) T = 25C A (PbFree) Tape & Reel Derate above 25C 2.4 mW/C SMMBD2837LT1G SOT23 3,000 / Thermal Resistance, R C/W JA (PbFree) Tape & Reel JunctiontoAmbient 417 MMBD2838LT1G SOT23 3,000 / Junction and Storage Temperature T , T 55 to +150 C J stg (PbFree) Tape & Reel 1. FR5 = 1.0 0.75 0.062 in. For information on tape and reel specifications, 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 8 MMBD2837LT1/DMMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G ELECTRICAL CHARACTERISTICS (EACH DIODE) (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V Vdc (BR) (I = 100 Adc) (BR) MMBD2837LT1G, SMMBD2837LT1G 35 MMBD2838LT1G 75 Reverse Voltage Leakage Current (Note 3.) I Adc R (V = 30 Vdc) R MMBD2837LT1G, SMMBD2837LT1G 0.1 (V = 50 Vdc) R MMBD2838LT1G 0.1 Diode Capacitance (V = 0 V, f = 1.0 MHz) C 4.0 pF R T Forward Voltage V Vdc F (I = 10 mAdc) 1.0 F (I = 50 mAdc) 1.0 F (I = 100 mAdc) 1.2 F Reverse Recovery Time (I = I = 10 mAdc, I = 1.0 mAdc) (Figure 1) t 4.0 ns F R R(REC) rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. For each individual diode while the second diode is unbiased. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 INPUT 50 OUTPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2