EMF5XV6T5 Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network EMF5XV6T5 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, common for Q and Q ) A 1 2 Characteristic Symbol Min Typ Max Unit Q 1 OFF CHARACTERISTICS Collector-Base Cutoff Current (V = 50 V, I = 0) I 100 nAdc CB E CBO Collector-Emitter Cutoff Current (V = 50 V, I = 0) I 500 nAdc CE B CEO Emitter-Base Cutoff Current (V = 6.0 V, I = 0) I 0.1 mAdc EB C EBO Collector-Base Breakdown Voltage (I = 10 A, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage (Note 3) (I = 2.0 mA, I = 0) V 50 Vdc C B (BR)CEO ON CHARACTERISTICS (Note 3) DC Current Gain (V = 10 V, I = 5.0 mA) h 80 140 CE C FE Collector-Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA) V 0.25 Vdc C B CE(sat) Output Voltage (on) (V = 5.0 V, V = 3.5 V, R = 1.0 k ) V 0.2 Vdc CC B L OL Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k ) V 4.9 Vdc CC B L OH Input Resistor R1 32.9 47 61.1 k Resistor Ratio R1/R2 0.8 1.0 1.2 Q 2 OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I = 10 mAdc, I = 0) V 12 Vdc C B (BR)CEO CollectorBase Breakdown Voltage (I = 0.1 mAdc, I = 0) V 15 Vdc C E (BR)CBO EmitterBase Breakdown Voltage (I = 0.1 mAdc, I = 0) V 6.0 Vdc E C (BR)EBO Collector Cutoff Current (V = 15 Vdc, I = 0) I 0.1 Adc CB E CBO Emitter Cutoff Current (V = 6.0 Vdc) I 0.1 Adc EB EBO ON CHARACTERISTICS DC Current Gain (Note 4) (I = 10 mA, V = 2.0 V) h 270 680 C CE FE CollectorEmitter Saturation Voltage (Note 4) (I = 200 mA, I = 10 mA) V 250 mV C B CE(sat) BaseEmitter Saturation Voltage (Note 4) (I = 150 mA, I = 20 mA) V 0.81 0.90 V C B BE(sat) BaseEmitter Turnon Voltage (Note 4) (I = 150 mA, V = 3.0 V) V 0.81 0.875 V C CE BE(on) Input Capacitance (V = 0 V, f = 1.0 MHz) C 52 pF EB ibo Output Capacitance (V = 0 V, f = 1.0 MHz) C 30 pF CB obo TurnOn Time (I = 50 mA, I = 500 mA, R = 3.0 ) t 50 ns BI C L on TurnOff Time (I = I = 50 mA, I = 500 mA, R = 3.0 ) t 80 ns B1 B2 C L off 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. 4. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle 2%. 300 250 200 150 100 R = 833C/W 50 JA 0 50 0 50 100 150 T , AMBIENT TEMPERATURE (C) A Figure 1. Derating Curve