FDB9506L-F085 Power MOSFET 40 V, 3.6 m , 110 A, Single PChannel Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G Wettable Flank Option for Enhanced Optical Inspection AECQ101 Qualified and PPAP Capable V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3.6 m 10 V Compliant 40 V 80 A 5.0 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit D DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 16 V GS Continuous Drain T = 25C I 110 A C D Current R JC G T = 100C 110 (Notes 1, 3) C Steady State Power Dissipation T = 25C P 176 W C D R (Note 1) JC T = 100C 88 C S Continuous Drain T = 25C I 24.5 A PCHANNEL MOSFET D A Current R JA T = 100C 17.3 (Notes 1, 2, 3) A Steady State Power Dissipation P W T = 25C 3.5 A D D R (Notes 1, 2) JA T = 100C 1.7 A G Pulsed Drain Current T = 25C, t = 10 s I 1260 A C p DM S 2 Operating Junction and Storage Temperature T , T 55 to C D PAK3 J stg Range +175 TO263 CASE 418AJ Source Current (Body Diode) (Note 1) I 110 A S Single Pulse DraintoSource Avalanche E 370 mJ AS Energy (I = 86 A) L(pk) MARKING DIAGRAM Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the &Z&3&K device. If any of these limits are exceeded, device functionality should not be FDB assumed, damage may occur and reliability may be affected. 9506L THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State R 0.85 C/W JC &Z = Assembly Plant Code JunctiontoAmbient Steady State (Note 2) R 43 JA &3 = Numeric Date Code 1. The entire application environment impacts the thermal resistance values shown, &K = Lot Code they are not constants and are only valid for the particular conditions noted. FDB9506L = Specific Device Code Maximum current is limited by package configuration. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: December, 2018 Rev. 0 FDB9506LF085/DFDB9506L F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V =0V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 22 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V =0V, V = 40 V, T =25C 1 A DSS GS DS J V =0V, V = 40 V, T = 175C 1 mA GS DS J Zero Gate Voltage Drain Current I V =0V, V = 16 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V =V , I = 250 A 1 1.8 3 V GS(th) GS DS D Threshold Temperature Coefficient V /T 6.4 mV/C GS(th) J DraintoSource On Resistance R V = 10 V, I = 80 A 2.8 3.6 m DS(on) GS D V = 4.5 V, I = 40 A 3.9 5.0 GS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 100 KHz, V = 20 V 9100 pF iss GS DS Output Capacitance C 3300 pF oss Reverse Transfer Capacitance C 140 pF rss Gate Resistance R V = 0.5 V, f = 100 KHz 19 g GS Total Gate Charge Q V = 10 V, V = 32 V, I = 80 A 126 nC G(TOT) GS DS D V = 4.5 V, V = 32 V, I = 80 A 58 GS DS D Threshold Gate Charge Q V = 0 to 1 V 8 g(th) GS GatetoSource Gate Charge Q V = 32 V, I = 80 A 27 gs DD D GatetoDrain Miller Charge Q 16 gd Plateau Voltage V 3.2 V GP SWITCHING CHARACTERISTICS Turn-On Delay Time t V = 20 V, I = 80 A, 12 ns d(on) DD D V = 10 V, R =6 GS GEN Turn-On Rise Time t 9 ns r Turn-Off Delay Time t 474 ns d(off) Turn-Off Fall Time t 140 ns f DRAINSOURCE DIODE CHARACTERISTICS SourcetoDrain Diode Voltage V I = 80 A, V = 0 V 0.91 1.25 V SD SD GS I = 40 A, V = 0 V 0.84 1.2 V SD GS Reverse Recovery Time T V = 0 V, dI /dt = 100 A/ s 87 ns RR GS SD I = 80 A S Charge Time t 42 a Discharge Time t 45 b Reverse Recovery Charge Q 101 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2