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FDMS8674 N-Channel PowerTrench MOSFET
May 2009
FDMS8674
tm
N-Channel PowerTrench MOSFET
30V, 21A, 5.0m:
Features General Description
Max r = 5.0m : at V = 10V, I = 17A The FDMS8674 has been designed to minimize losses in power
DS(on) GS D
conversion application. Advancements in both silicon and
Max r = 8.0m : at V = 4.5V, I = 14A
DS(on) GS D
package technologies have been combined to offer the lowest
Advanced Package and Silicon combination r while maintaining excellent switching performance.
DS(on)
for low r and high efficiency
DS(on)
Applications
MSL1 robust package design
Computing VR & IMVP Vcore
RoHS Compliant
Secondary Side Synchronous Rectifier
POL DC/DC Converter
Oring FET/ Load Switch
Top Bottom
Pin 1
S
G
5 4
D
S
S
G
6 3 S
D
D 7 2 S
D
D
8 1
D S
D
D
Power 56
MOSFET Maximum Ratings T = 25C unless otherwise noted
A
Symbol Parameter Ratings Units
V Drain to Source Voltage 30 V
DS
V Gate to Source Voltage 20 V
GS
Drain Current -Continuous (Package limited) T = 25C 21
C
-Continuous (Silicon limited) T = 25C 94
C
I A
D
-Continuous T = 25C (Note 1a) 17
A
-Pulsed 150
E Single Pulse Avalanche Energy (Note 3) 181 mJ
AS
Power Dissipation T = 25C 78
C
P W
D
Power Dissipation T = 25C (Note 1a) 2.5
A
T , T Operating and Storage Junction Temperature Range -55 to +150 C
J STG
Thermal Characteristics
R Thermal Resistance, Junction to Case 1.6
T JC
C/W
R Thermal Resistance, Junction to Ambient (Note 1a) 50
T JA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS8674 FDMS8674 Power 56 13 12mm 3000units
1
2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDMS8674 Rev.C2