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This literature is subject to all applicable copyright laws and is not for resale in any manner.FJA4210 PNP Epitaxial Silicon Transistor October 2008 FJA4210 PNP Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability : I = -10A C High Power Dissipation Wide S.O.A Complement to FJA4310 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* T = 25C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -200 V CBO V Collector-Emitter Voltage -140 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current (DC) -10 A C I Base Current (DC) -1.5 A B P Collector Dissipation (T =25C) 100 W C C T Junction Temperature 150 C J T Storage Temperature - 55 ~ 150 C STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =-5mA, I =0 -200 V CBO C E BV Collector-Emitter Breakdown Voltage I =-50mA, R = -140 V CEO C BE BV Emitter-Base Breakdown Voltage I =-5mA, I =0 -6 V EBO E C I Collector Cut-off Current V =-200V, I =0 -10 mA CBO CB E I Emitter Cut-off Current V =-6V, I =0 -10 mA EBO EB C h * DC Current Gain V =-4V, I =-3A 50 180 FE CE C V (sat) Collector-Emitter Saturation Voltage I =-5A, I =-0.5A -0.5 V CE C B C Output Capacitance V =-10V, f=1MHz 400 pF ob CB f Current Gain Bandwidth Product V =-5V, I =-1A 30 MHz T CE C * Pulse Test: Pulse Width 300ms, Duty Cycle2% h Classification FE Classification R O Y h 50 ~ 100 70 ~ 140 90 ~ 180 FE 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FJA4210 Rev. C1 1