FODM121R2 is an N-channel Metal Oxide Semiconductor (MOSFET) from ON Semiconductor. It is designed for high voltage switching applications and is suitable for a wide variety of electronic applications. This MOSFET has an operating voltage of up to 100V and can handle up to 15A of current. It has a breakdown voltage of 125V, a gate threshold voltage of -1.5V, a maximum output capacitance of 350pF, and a maximum on-state resistance of 40m. This MOSFET is capable of handling high power levels and can be used in applications such as welding inverters, converters, motor controllers, UPS systems, and more.