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This literature is subject to all applicable copyright laws and is not for resale in any manner.FZT3019 NPN General Purpose Amplifier April 2006 FZT3019 tm NPN General Purpose Amplifier Features 4 This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. 3 2 Sourced from process 12. 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * T = 25C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 80 V CEO V Collector-Base Voltage 140 V CBO V Emitter-Base Voltage 7.0 V EBO I Collector current - Continuous 1.0 A C T , T Junction and Storage Temperature -55 ~ +150 C J stg * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Sustaining Voltage * I = 30 mA, I = 0 80 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100 A, I = 0 140 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 100 A, I = 0 7.0 Vn (BR)EBO E C I Collector Cutoff Current V = 90 V, I = 0 10 nA CBO CB E V = 90 V, I = 0, T = 150C 10 A CB E a I Emitter-Cutoff Current V = 5 V, 10 nA EBO EB On Characteristics h DC Current Gain I = 0.1 mA, V = 10 V 50 FE C CE I = 10 mA, V = 10 V 90 C CE I = 150 mA, V = 10 V 100 300 C CE I = 500 mA, V = 10 V 50 C CE I = 1.0 A, V = 10 V 15 C CE V Collector-Emitter Saturation Voltage I = 150 mA, I = 15 mA 0.2 V CE(sat) C B I = 500 mA, I = 50 mA 0.5 V C B V Base-Emitter Saturation Voltage I = 150 mA, I = 15 mA 1.1 V BE(sat) C B Small Signal Characteristics f Current Gain - Bandwidth Product I = 50 mA, V = 10 V, f = 20 MHz 100 MHz T C CE C Collector-Base Capacitance V = 10 V, I = 0, f = 1.0 MHz 12 pF cob CB E C Input Capacitance V = 0.5 V, I = 0, f = 1.0 MHz 60 pF ibo BE E h Small Signal current Gain I = 50 mA, V = 10 V, 80 400 fe C CE f = 20 MHz rbCc Collector Base Time Constant I = 10 mA, V = 10 V, f = 4.0 MHz 400 pS C CB NF Noise Figure I = 100 mA, V = 10 V, 4.0 dB C CE R = 1.0k, f = 1.0KHz S * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FZT3019 Rev. B