H11F1M, H11F2M, H11F3M Photo FET Optocouplers
May 2012
H11F1M, H11F2M, H11F3M
Photo FET Optocouplers
Features General Description
As a remote variable resistor: The H11FXM series consists of a Gallium-Aluminum-
100 to 300M Arsenide IRED emitting diode coupled to a symmetrical
bilateral silicon photo-detector. The detector is electri-
15pF shunt capacitance
cally isolated from the input and performs like an ideal
100G I/O isolation resistance
isolated FET designed for distortion-free control of low
As an analog switch:
level AC and DC analog signals. The H11FXM series
Extremely low offset voltage
devices are mounted in dual in-line packages.
60 V signal capability
pk-pk
No charge injection or latch-up
UL recognized (File #E90700)
Applications
As a remote variable resistor:
Isolated variable attenuator
Automatic gain control
Active filter fine tuning/band switching
As an analog switch:
Isolated sample and hold circuit
Multiplexed, optically isolated A/D conversion
Schematic Package Outlines
OUTPUT
1
ANODE 6
TERM.
CATHODE 2 5
OUTPUT
3 4
TERM.
2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Absolute Maximum Ratings
(T = 25C unless otherwise specied)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Device Value
Units
TOTAL DEVICE
T Storage Temperature All -40 to +150 C
STG
T Operating Temperature All -40 to +100 C
OPR
T Lead Solder Temperature All 260 for 10 sec C
SOL
EMITTER
I Continuous Forward Current All 60 mA
F
V Reverse Voltage All 5 V
R
I Forward Current Peak (10s pulse, 1% duty cycle) All 1 A
F(pk)
P LED Power Dissipation 25C Ambient All 100 mW
D
Derate Linearly from 25C 1.33 mW/C
DETECTOR
P Detector Power Dissipation @ 25C All 300 mW
D
Derate linearly from 25C 4.0 mW/C
BV Breakdown Voltage (either polarity) H11F1M, 30 V
4-6
H11F2M
H11F3M 15 V
I Continuous Detector Current (either polarity) All 100 mA
4-6
2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 2