ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. KAF-0402 768 (H) x 512 (V) Full Frame CCD Image Sensor Description The KAF0402 Image Sensor is a high performance area CCD (charge-coupled device) image sensor with 768(H) 512 (V) www.onsemi.com photoactive pixels designed for a wide range of image sensing applications. The sensor incorporates true two-phase CCD technology, simplifying the support circuits required to drive the sensor as well as reducing dark current without compromising charge capacity. The sensor also utilizes the TRUESENSE Transparent Gate Electrode to improve sensitivity compared to the use of a standard front side illuminated polysilicon electrode. Optional microlenses focus the majority of the light through the transparent gate, increasing the optical response further. Table 1. GENERAL SPECIFICATIONS Parameter Typical Value Figure 1. KAF0402 Full Frame CCD Architecture Full Frame CCD, Enhanced Image Sensor Response Total Number of Pixels 784 (H) 520 (V) Applications Number of Active Pixels 768 (H) 512 (V) = approx. 0.4 Mp Digitization Pixel Size 9.0 m (H) 9.0 m (V) Medical Active Image Size 6.91 mm (H) 4.6 mm (V) Scientific 8.3 mm (Diagonal) 1/2 Optical Format ORDERING INFORMATION Die Size 8.4 mm (H) 5.5 mm (V) See detailed ordering and shipping information on page 2 of Aspect Ratio 3:2 this data sheet. Saturation Signal 100,000 electrons Quantum Efficiency Peak: 77% (with Microlens) 400 nm: 45% Quantum Efficiency Peak: 65% (No Microlens) 400 nm: 30% Output Sensitivity 10 V/e Read Noise 15 electrons 2 Dark Current < 10 pA/cm at 25C Dark Current Doubling Temperature 6.3C Dynamic Range 76 dB Charge Transfer Efficiency > 0.99999 Blooming Suppression None Maximum Date Rate 10 MHz Package CERDIP Package (Sidebrazed) Cover Glass Clear or AR Coated, 2 Sides NOTE: Parameters above are specified at T = 25C unless otherwise noted. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: April, 2015 Rev. 2 KAF0402/D