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KAF-09000 3056 (H) x 3056 (V) Full Frame CCD Image Sensor Description Combining high resolution with outstanding sensitivity, the KAF09000 image sensor has been specifically designed to meet the needs of nextgeneration low cost digital radiography and scientific www.onsemi.com imaging systems. The high sensitivity available from 12micron square pixels combines with a low noise architecture to allow system designers to improve overall image quality, or to relax system tolerances to achieve lower cost. The excellent uniformity of the KAF09000 image sensor improves overall image integrity by simplifying image corrections, while integrated anti blooming protection prevents image bleed from overexposure in bright areas of the image. To simplify device integration, the KAF09000 image sensor uses the same pinout and package as the KAF16801 image sensor. The sensor utilizes the TRUESENSE Transparent Gate Electrode to improve sensitivity compared to the use of a standard frontside illuminated polysilicon electrode. Figure 1. KAF09000 CCD Image Sensor Table 1. GENERAL SPECIFICATIONS Features Parameter Typical Value TRUESENSE Transparent Gate Electrode Architecture Full Frame CCD Square Pixels for High Sensitivity Total Number of Pixels 3103 (H) x 3086 (V) = 9.6 Mp Large Pixel Size Number of Effective Pixels 3085 (H) x 3085 (V) = 9.5 Mp Large Image Area Number of Active Pixels 3056 (H) x 3056 (V) = 9.3 Mp High Quantum Efficiency Pixel Size 12 m (H) x 12 m (V) Low Noise Architecture Active Image Size 36.7 mm (H) x 36.7 mm (V) Broad Dynamic Range 51.9 mm diagonal, 645 1.3x optical format Applications Aspect Ratio Square Horizontal Outputs 1 Medical Saturation Signal 110 ke Scientific Output Sensitivity 24 V/e Quantum Efficiency (550 nm) 64% ORDERING INFORMATION 2 Responsivity (550 nm) 2595 ke/ J/cm See detailed ordering and shipping information on page 2 of 2 62.3 V/ J/cm this data sheet. Read Noise (f = 3 MHz) 7 e Dark Signal (T = 25C) 5 e/pix/sec Dark Current Doubling Temperature 7C Linear Dynamic Range (f = 4 MHz) 84 dB Blooming Protection > 100 X saturation exposure (4 ms exposure time) Maximum Data Rate 10 MHz Package CERDIP, (sidebrazed pins, CuW) Cover Glass AR coated 2 sides Taped Clear NOTE: Parameters above are specified at T = 25C unless otherwise noted. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: February, 2015 Rev. 3 KAF09000/D