Thyristors Surface Mount 100V -600V > MCR12DSM, MCR12DSN MCR12DSM, MCR12DSN Description The MCR12DSM and MCR12DSN are designed for high volume, low cost, industrial and consumer applications such as motor control process control temperature, light and speed control CDI (Capacitive Discharge Ignition) and small engines. Features Small Size ESD Ratings: Human Body Model, 3B > 8000V Passivated Die Surface for Machine Model, C > 400V Reliability and Uniformity Low Level Triggering and Holding Characteristics UL Recognized compound meeting flammability rating V-0 Pin Out Functional Diagram 4 4 G 2 A 1 K 3 1 2 3 Additional Information Datasheet Resources Samples 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20Thyristors Surface Mount 100V -600V > MCR12DSM, MCR12DSN Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive OffState Voltage (Note 1) MCR12DSM V 600 DRM V (T = 40 to +110C, Sine Wave, 50 to 60 Hz, R = 1 k ) MCR12DSN V 800 C GK RRM OnState RMS Current (180 Conduction Angles T = 75C) I 12 A C T(RMS) Average On-State Current (180 Conduction Angles T = 75C) I 7.6 A C T (AV) Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, T = 110C) I 100 A J TSM 2 2 Circuit Fusing Consideration (t = 8.3 ms) I t 41 A s Forward Peak Gate Power (Pulse Width 1.0 sec, T = 75C) P 5.0 W C GM Forward Average Gate Power (t = 8.3 ms, T = 75C) P 0.5 W C G (AV) Forward Peak Gate Current (Pulse Width 1.0 sec, T = 75C) I 2.0 A C GM Operating Junction Temperature Range T -40 to +110 C J Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the component. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect component reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM RRM shall not be tested with a constant current source such that the voltage ratings of the component are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, JunctiontoCase R 2.2 JC C/W Thermal Resistance, JunctiontoAmbient R 88 JA Thermal Resistance, JunctiontoAmbient (Note 2) R 80 JA Maximum Lead Temperature for Soldering Purposes (Note 3) T 260 C L Electrical Characteristics - OFF (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit T = 25C - - 10 Peak Repetitive Forward or Reverse Blocking Current J I DRM A 4 (V = Rated V or V , R = 1.0 k ) I AK DRM RRM GK T = 110C RRM - - 500 J Electrical Characteristics - ON (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit Peak Reverse Gate Blocking Voltage, (I = 10 A) V 10 12.5 18 V GR GRM Peak Reverse Gate Blocking Current, (V = 10 V) I 1.2 A GR GRM Peak Forward OnState Voltage (Note 5), (I = 20 A) V 1.3 1.9 V TM TM T = 25C 5.0 12 200 Gate Trigger Voltage (Note 6) J I A GT (V = 12 Vdc R = 100 , T =110) AK L C T = 40C 300 J T = 25C 0.45 0.65 1.0 J Gate Trigger Voltage (Continuous dc) (Note 6) T = 40C V 1.5 V J GT (V = 12 V R = 100 ) AK L T = 110C 0.2 J T = 25C 0.5 1.0 6.0 Holding Current J I mA H (V = 12 V, Initiating Current = 200 mA, R = 1 k) D GK T = 40C 10 J T = 25C 0.5 1.0 6.0 Latching Current J I mA L (V = 12 V, I = 2.0 mA, R = 1 k) D G GK T = 40C 10 J Peak Reverse Gate Blocking Current (V = 10 V) I 1.2 A GR RGM Turn-On Time (Source Voltage = 12 V, R = 6.0 K, I = 16 A(pk), R = 1.0 K) S T GK t 2.0 5.0 s gt (V = Rated V , Rise Time = 20 ns, Pulse Width = 10 s) D DRM 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20