X-On Electronics has gained recognition as a prominent supplier of MICROFJ-40035-TSV-TR1 Photodiodes across the USA, India, Europe, Australia, and various other global locations. MICROFJ-40035-TSV-TR1 Photodiodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

MICROFJ-40035-TSV-TR1 ON Semiconductor

MICROFJ-40035-TSV-TR1 electronic component of ON Semiconductor
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Part No.MICROFJ-40035-TSV-TR1
Manufacturer: ON Semiconductor
Category: Photodiodes
Description: Photodiodes J-SERIES 4MM 35U TSV
Datasheet: MICROFJ-40035-TSV-TR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 63.217 ea
Line Total: USD 63.22 
Availability - 28
Ship by Fri. 06 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
28
Ship by Fri. 06 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 63.217

   
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We are delighted to provide the MICROFJ-40035-TSV-TR1 from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MICROFJ-40035-TSV-TR1 and other electronic components in the Photodiodes category and beyond.

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DATA SHEET www.onsemi.com Silicon Photomultipliers (SiPM), High PDE and Timing Resolution Sensors in a TSV Package J-Series SiPM Sensors onsemis J-Series low-light sensors feature a high PDE (photon detection efficiency) that is achieved using a high-volume, P-on-N silicon foundry process. The J-Series sensors incorporate major improvements in the transit time spread which results in a significant improvement in the timing performance of the sensor. J-Series sensors ORDERING INFORMATION See detailed ordering and shipping information on page 11 of are available in different sizes (3 mm, 4 mm and 6 mm) and use a TSV this data sheet. (Through Silicon Via) process to create apackage with minimal deadspace, that is compatible with industry standard lead-free, reflow soldering processes. The J-Series Silicon Photomultipliers (SiPM) combine high performance with the practical advantages of solid-state technology: low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and low cost. For more information on the J-Series sensors please refer to the website. Table 1. GENERAL PARAMETERS Parameter (Note 1) Minimum Typical Maximum Unit 24.2 24.7 V Breakdown Voltage (Vbr) (Note 2) Overvoltage (OV) 1 6 V Operating Voltage (Vop = Vbr + OV)) 25.2 30.7 V Spectral Range (Note 3) 200 900 nm Peak PDE Wavelength ( p) 420 nm Temperature dependence of Vbr 21.5 mV/C 1. All measurements made at 21C unless otherwise stated. 2. The breakdown voltage (Vbr) is defined as the value of the voltage intercept of a straight line fit to a plot of I vs V, where I is the current and V is the bias voltage. 3. The range where PDE > 2.0% at Vbr + 6.0 V. Table 2. PHYSICAL PARAMETERS 3 mm 4 mm 6 mm 30020, 30035 40035 60035 Parameter 2 2 2 Active Area 3.07 3.07 mm 3.93 3.93 mm 6.07 6.07 mm No. of Microcells 30020: 14,410 40035: 9,260 60035: 22,292 30035: 5,676 Microcell Fill Factor 30020: 62% 40035: 75% 60035: 75% 30035: 75% Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2021 Rev. 7 MICROJSERIES/DJSeries SiPM Sensors Table 3. PERFORMANCE PARAMETERS 30035 40035 60035 Unit Overvoltage +2.5 V +6 V +2.5 V +6 V +2.5 V +6 V Parameter (Note 4) Unit PDE (Note 5) 38 50 38 50 38 50 % 2 Dark Count Rate 50 150 50 150 50 150 kHz/mm 6 6 6 6 6 6 Gain (anode-cathode) 2.9 10 6.3 10 2.9 10 6.3 10 2.9 10 6.3 10 A Dark Current typical 0.23 1.9 0.35 3.0 0.9 7.5 Dark Current maximum 0.31 3.00 0.45 4.0 1.25 12.0 Rise Time (Note 6) anode-cathode output 90 110 90 110 180 250 ps Microcell Recharge Time Constant (Note 7) 45 48 50 ns Capacitance (Note 8) (anode output) 1070 1800 4140 pF Capacitance (Note 8) (fast output) 40 70 160 pF Fast Output Pulse Width (FWHM) 1.5 1.7 3.0 ns Crosstalk 8 25 8 25 8 25 % Afterpulsing 0.75 5.0 0.75 5.0 0.75 5.0 % 30020 Overvoltage +2.5 V +5 V Parameter (Note 4) Unit PDE (Note 5) 30 38 % 2 Dark Count Rate 50 125 kHz/mm 6 6 Gain (anode-cathode) 1.0 10 1.9 10 A Dark Current typical 0.1 0.45 Dark Current maximum 0.2 0.72 Rise Time (Note 6) anode-cathode output 130 160 ps Microcell Recharge Time Constant (Note 7) 15 ns Capacitance (Note 8) (anode output) 1040 pF Capacitance (Note 8) (fast output) 50 pF Fast Output Pulse Width (FWHM) 1.4 ns Crosstalk 2.5 7.5 % Afterpulsing 0.75 5.0 % 4. All measurements made at 21C unless otherwise stated. 5. PDE does not contain afterpulsing or crosstalk, and is quoted at the peak wavelength ( ). p 6. Measured as time to go from 10% to 90% of the peak amplitude and measured over a 1 series output resistor. 7. RC charging time constant of the microcell (). 8. Capacitance values are for the complete TSV package. Table 4. TVS PACKAGE SPECIFICS 3 mm 4 mm 6 mm 30020, 30035 40035 60035 2 2 2 Package Dimensions 3.16 3.16 mm 4.00 4.00 mm 6.13 6.13 mm Recommended Operating Temperature Range 40C +85C Soldering Conditions Reflow Solder Cover Material Glass Cover Refractive Index 1.53 436 nm Moisture Sensitivity Level Tape & reel MSL3* Cut tape MSL4* Maximum Average Current 10 mA 10 mA 15 mA *Please refer to the TSV Handling and Soldering guide for more information on MSL for different delivery options. www.onsemi.com 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
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ON SEMICONDUCTOR (FAIRCHILD)
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ON5
onsemi
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OOF
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