X-On Electronics has gained recognition as a prominent supplier of MJB44H11G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJB44H11G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJB44H11G ON Semiconductor

Hot MJB44H11G electronic component of ON Semiconductor
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See Product Specifications
Part No.MJB44H11G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 80 V 10 A 50MHz 2 W Surface Mount D²PAK
Datasheet: MJB44H11G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5242 ea
Line Total: USD 0.52 
Availability - 9
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5242
10 : USD 0.5191

1
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 1.3937
10 : USD 1.17
50 : USD 1.0478
100 : USD 0.9081
500 : USD 0.8451
1000 : USD 0.8184

9620
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.243
10 : USD 0.6259
100 : USD 0.6226
500 : USD 0.5973
10000 : USD 0.5874
25000 : USD 0.583

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJB44H11G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJB44H11G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) Complementary MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I = 30 mA, I = 0) V 80 Vdc C B CEO(sus) Collector Cutoff Current (V = Rated V , V = 0) I 10 A CE CEO BE CES Emitter Cutoff Current (V = 5 Vdc) I 50 A EB EBO ON CHARACTERISTICS CollectorEmitter Saturation Voltage (I = 8 Adc, I = 0.4 Adc) V 1.0 Vdc C B CE(sat) BaseEmitter Saturation Voltage (I = 8 Adc, I = 0.8 Adc) V 1.5 Vdc C B BE(sat) DC Current Gain (V = 1 Vdc, I = 2 Adc) h 60 CE C FE DC Current Gain (V = 1 Vdc, I = 4 Adc) 40 CE C DYNAMIC CHARACTERISTICS Collector Capacitance (V = 10 Vdc, f = 1 MHz) C pF CB test cb MJB44H11, NJVMJB44H11 130 MJB45H11, NJVMJB45H11 230 Gain Bandwidth Product (I = 0.5 Adc, V = 10 Vdc, f = 20 MHz) f MHz C CE T MJB44H11, NJVMJB44H11 50 MJB45H11, NJVMJB45H11 40 SWITCHING TIMES Delay and Rise Times(I = 5 Adc, I = 0.5 Adc) t + t ns C B1 d r MJB44H11, NJVMJB44H11 300 MJB45H11, NJVMJB45H11 135 Storage Time(I = 5 Adc, I = I = 0.5 Adc) t ns C B1 B2 s MJB44H11, NJVMJB44H11 500 MJB45H11, NJVMJB45H11 500 Fall Time(I = 5 Adc, I = I = 0.5 Adc) t ns C B1 B2 f MJB44H11, NJVMJB44H11 140 MJB45H11, NJVMJB45H11 100 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 P (pk) Z = r(t) R JC(t) JC 0.05 0.07 R = 1.56C/W MAX JC 0.05 D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN t 1 0.03 READ TIME AT t 1 t 2 0.02 0.01 T - T = P Z J(pk) C (pk) JC(t) DUTY CYCLE, D = t /t 1 2 SINGLE PULSE 0.01 0.01 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.02 t, TIME (ms) Figure 1. Thermal Response

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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