MJD128T4G (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. www.onsemi.com Features Monolithic Construction With Builtin BaseEmitter Shunt Resistors SILICON High DC Current Gain: h = 2500 (Typ) I = 4.0 Adc FE C POWER TRANSISTOR Epoxy Meets UL 94 V0 0.125 in. 8 AMPERES ESD Ratings: 120 VOLTS, 20 WATTS Human Body Model, 3B > 8000 V Machine Model, C > 400 V NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable DPAK These are PbFree Devices* CASE 369C STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit MARKING DIAGRAM CollectorEmitter Voltage V 120 Vdc CEO Base 1 CollectorBase Voltage V 120 Vdc CB AYWW 4 Collector 2 J128G EmitterBase Voltage V 5 Vdc EB Emitter 3 Collector Current I Adc C Continuous 8 A = Assembly Location Peak 16 Y = Year Base Current I 120 mAdc B WW = Work Week J128 = Device Code Total Power Dissipation P W D G = PbFree Package T = 25C 20 W/C C Derate above 25C 0.16 Total Power Dissipation* P W D ORDERING INFORMATION T = 25C 1.75 W/C A Derate above 25C 0.014 Device Package Shipping Operating and Storage Junction T , T 65 to C J stg MJD128T4G DPAK 2,500/Tape & Reel Temperature Range +150 (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the NJVMJD128T4G DPAK 2,500/Tape & Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, THERMAL CHARACTERISTICS including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Characteristic Symbol Max Unit Brochure, BRD8011/D. Thermal Resistance, JunctiontoCase R 6.25 C/W JC Thermal Resistance, C/W R JA JunctiontoAmbient (Note 1) 71.4 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: January, 2016 Rev. 6 MJD128/DMJD128T4G (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 30 mAdc, I = 0) 120 C B Collector Cutoff Current I mA CEO (V = 120 Vdc, I = 0) 5 CE B Collector Cutoff Current I Adc CBO (V = 100 Vdc, I = 0) 10 CB E Emitter Cutoff Current I mAdc EBO (V = 5 Vdc, I = 0) 2 BE C ON CHARACTERISTICS DC Current Gain h FE (I = 4 Adc, V = 4 Vdc) C CE 1000 12,000 (I = 8 Adc, V = 4 Vdc) C CE 100 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 4 Adc, I = 16 mAdc) C B 2 (I = 8 Adc, I = 80 mAdc) C B 4 BaseEmitter Saturation Voltage (1) V Vdc BE(sat) (I = 8 Adc, I = 80 mAdc) 4.5 C B BaseEmitter On Voltage V Vdc BE(on) (I = 4 Adc, V = 4 Vdc) 2.8 C CE DYNAMIC CHARACTERISTICS CurrentGainBandwidth Product h MHz fe (I = 3 Adc, V = 4 Vdc, f = 1 MHz) 4 C CE Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) 300 CB E SmallSignal Current Gain h fe (I = 3 Adc, V = 4 Vdc, f = 1 kHz) 300 C CE 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. T T A C 2.5 25 2 20 T C 1.5 15 T A 1 10 SURFACE MOUNT 0.5 5 0 0 25 50 75 100 125 150 T, TEMPERATURE (C) Figure 1. Power Derating www.onsemi.com 2 P , POWER DISSIPATION (WATTS) D