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This literature is subject to all applicable copyright laws and is not for resale in any manner.MJD210 MJD210 D-PAK for Surface Mount Applications High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 40 V CBO V Collector-Emitter Voltage - 25 V CEO V Emitter-Base Voltage - 8 V EBO I Collector Current (DC) - 5 A C I Collector Peck Current (Pulse) - 10 A CP I Base Current - 1 A B P Collector Dissipation (T = 25C) 12.5 W C C Collector Dissipation (T = 25C) 1.4 W a T Junction Temperature 150 C J T Storage Temperature - 65 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage I = - 10mA, I = 0 -25 V CEO C B I Collector Cut-off Current V = - 40V, I = 0 -100 nA CBO CB E I Emitter Cut-off Current V = - 8V, I = 0 -100 nA EBO EBO C h * DC Current Gain V = - 1V, I = - 500mA 70 FE CE C V = - 1V, I = - 2A 45 180 CE C V = - 2V, I = - 5A 10 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 500mA, I = - 50mA -0.3 V CE C B I = - 2A, I = - 200mA -0.75 V C B I = - 5A, I = - 1A -1.8 V C B V (sat) * Base-Emitter Saturation Voltage I = - 5A, I = - 1A -2.5 V BE C B V (on) * Base-Emitter ON Voltage V = - 1V, I = - 2A -1.6 V BE CE C f Current Gain Bandwidth Product V = - 10V, I = - 100mA 65 MHz T CE C C Output Capacitance V = - 10V, I = 0, f = 0.1MHz 120 pF ob CB E * Pulse Test: PW300 s, Duty Cycle2% 2001 Fairchild Semiconductor Corporation Rev. A2, June 2001