X-On Electronics has gained recognition as a prominent supplier of MJD45H11G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJD45H11G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJD45H11G ON Semiconductor

MJD45H11G electronic component of ON Semiconductor
MJD45H11G ON Semiconductor
MJD45H11G Bipolar Transistors - BJT
MJD45H11G  Semiconductors

Images are for reference only
See Product Specifications
Part No. MJD45H11G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 80 V 8 A 90MHz 1.75 W Surface Mount DPAK
Datasheet: MJD45H11G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
82: USD 0.7594 ea
Line Total: USD 62.27 
Availability - 1818
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ: 82  Multiples: 75
Pack Size: 75
Availability Price Quantity
1818
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 82
Multiples : 75
82 : USD 0.7594
300 : USD 0.5017
1050 : USD 0.478
2550 : USD 0.4634
5025 : USD 0.461
7500 : USD 0.4587
10050 : USD 0.4421
15000 : USD 0.4399

1900
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 93
Multiples : 75
93 : USD 0.6961
525 : USD 0.6262
1050 : USD 0.5791
4800 : USD 0.5201
12000 : USD 0.4996
26400 : USD 0.4986

17
Ship by Fri. 31 Jan to Wed. 05 Feb
MOQ : 1
Multiples : 1
1 : USD 1.1619
10 : USD 0.9705
30 : USD 0.8756
75 : USD 0.7604
525 : USD 0.7047
975 : USD 0.6748

191
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ : 3
Multiples : 1
3 : USD 1.176
10 : USD 1.0598
20 : USD 0.847
55 : USD 0.8008
750 : USD 0.7672

1600
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 93
Multiples : 75
93 : USD 0.6961
525 : USD 0.6262
1050 : USD 0.5791
4800 : USD 0.5201
12000 : USD 0.4996
26400 : USD 0.4986

2559
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 45
Multiples : 1
45 : USD 1.446
90 : USD 0.72
525 : USD 0.6476
1050 : USD 0.599
4800 : USD 0.538
12000 : USD 0.5167
26400 : USD 0.5157

2910
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 828
Multiples : 1
828 : USD 0.589
1000 : USD 0.5564

1053
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 828
Multiples : 1
828 : USD 0.589
1000 : USD 0.5564

1818
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 150
Multiples : 75
150 : USD 1.0352
300 : USD 0.7244
1050 : USD 0.6794
2550 : USD 0.6513
5025 : USD 0.6415

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the MJD45H11G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD45H11G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MJD45H11G is a T0-220 packaged N-Channel Enhancement Mode Field Effect Transistor from ON Semiconductor. It is typically used in applications where high switching speed is required. It can handle up to 25V drain to source voltage and has a 20A current rating. It also has an integrated diode for protection against reverse bias.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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