MJE5850, MJE5851, MJE5852 Switch-mode Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for highvoltage, highspeed, power switching in inductive circuits www.onsemi.com where fall time is critical. They are particularly suited for line operated switchmode applications. 8 AMPERE Features PCP SILICON Switching Regulators POWER TRANSISTORS Inverters 300350400 VOLTS Solenoid and Relay Drivers 80 WATTS Motor Controls COLLECTOR Deflection Circuits 2, 4 Fast TurnOff Times Operating Temperature Range 65 to +150 C 1 100 C Performance Specified for: BASE Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads 3 Saturation Voltages EMITTER Leakage Currents 4 Complementary to the MJE13007 Series These Devices are PbFree and are RoHS Compliant* MAXIMUM RATINGS TO220 CASE 221A09 Rating Symbol Value Unit STYLE 1 CollectorEmitter Voltage V Vdc CEO(sus) MJE5850 300 MJE5851 350 1 MJE5852 400 2 3 CollectorEmitter Voltage V Vdc CEV MJE5850 350 MARKING DIAGRAM MJE5851 400 MJE5852 450 Emitter Base Voltage V 6.0 Vdc EB Collector Current Continuous (Note 1) I 8.0 Adc C Collector Current Peak (Note 1) I 16 Adc CM MJE585xG Base Current Continuous (Note 1) I 4.0 Adc B AY WW Base Current Peak (Note 1) I 8.0 Adc BM Total Power Dissipation P D T = 25 C 80 W C Derate above 25 C 0.640 W/ C Operating and Storage Junction T , T 65 to 150 C J stg MJE585x = Device Code Temperature Range x = 0, 1, or 2 Stresses exceeding those listed in the Maximum Ratings table may damage the G = PbFree Package device. If any of these limits are exceeded, device functionality should not be A = Assembly Location assumed, damage may occur and reliability may be affected. Y = Year 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. WW = Work Week *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques ORDERING INFORMATION Reference Manual, SOLDERRM/D. See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 7 MJE5850/DMJE5850, MJE5851, MJE5852 THERMAL CHARACTERISTICS Rating Symbol Max Unit Thermal Resistance, JunctiontoCase R 1.25 C/W JC Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds T 275 C L ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 10 mA, I = 0) C B MJE5850 300 MJE5851 350 MJE5852 400 Collector Cutoff Current I mAdc CEV (V = Rated Value, V = 1.5 Vdc) 0.5 CEV BE(off) 2.5 (V = Rated Value, V = 1.5 Vdc, T = 100 C) CEV BE(off) C Collector Cutoff Current I mAdc CER (V = Rated V , R = 50 , T = 100 C) 3.0 CE CEV BE C Emitter Cutoff Current I mAdc EBO (V = 6.0 Vdc, I = 0) 1.0 EB C SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased I See Figure 12 S/b Clamped Inductive SOA with base reverse biased RBSOA See Figure 13 ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 2.0 Adc, V = 5 Vdc) C CE 15 (I = 5.0 Adc, V = 5 Vdc) C CE 5 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 4.0 Adc, I = 1.0 Adc) C B 2.0 (I = 8.0 Adc, I = 3.0 Adc) C B 5.0 (I = 4.0 Adc, I = 1.0 Adc, T = 100 C) C B C 2.5 BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 4.0 Adc, I = 1.0 Adc) C B 1.5 (I = 4.0 Adc, I = 1.0 Adc, T = 100 C) C B C 1.5 DYNAMIC CHARACTERISTICS Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1.0 kHz) 270 CB E test SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time (V = 250 Vdc, I = 4.0 A, I = 1.0 A, t 0.025 0.1 s CC C B1 d t = 50 s, Duty Cycle 2%) p Rise Time t 0.100 0.5 s r Storage Time (V = 250 Vdc, I = 4.0 A, I = 1.0 A, t 0.60 2.0 s CC C B1 s V = 5 Vdc, t = 50 s, Duty Cycle 2%) BE(off) p Fall Time t 0.11 0.5 s f Inductive Load, Clamped (Table 1) Storage Time (I = 4 A, V = 250 V, I = 1.0 A, t 0.8 3.0 s CM CEM B1 sv V = 5 Vdc, T = 100 C) BE(off) C Crossover Time t 0.4 1.5 s c Fall Time t 0.1 s fi Storage Time (I = 4 A, V = 250 V, I = 1.0 A, t 0.5 s CM CEM B1 sv V = 5 Vdc, T = 25 C) BE(off) C Crossover Time t 0.125 s c Fall Time t 0.1 s fi Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: PW = 300 s. Duty Cycle 2% www.onsemi.com 2