NCP4543IMN5RG-A ON Semiconductor

V 14 IN EN 15 POL 16 SR 17 V 18 IN V IN EN POL V CC NCP4543 ecoSwitch Advanced Load Management Controlled Load Switch with Low R ON The NCP4543 load switch provides a component and area-reducing solution for efficient power domain switching with inrush current www.onsemi.com limit via soft start. It is designed to integrate control and driver functionality with a high performance low on-resistance power MOSFET in a single device. This cost effective solution is ideal for R TYP V V I ON CC IN MAX power management and hotswap applications requiring low power 10.2 m 5.0 V 1.8 V consumption in a small footprint. 7.3 A 12.2 m 3.3 V 5.0 V Features Advanced Controller with Charge Pump MARKING Integrated NChannel MOSFET with ESD Protection DIAGRAM SoftStart via Adjustable Slew Rate Control 1 1 NCP Low OnResistance QFN18, 3x3 4543 Input Voltage Range 0.5 V to 6 V CASE 485BF ALYW Low Standby Current Load Bleed Function A = Assembly Location No External Components Required L = Wafer Lot Y = Year Enable Pins with CMOS Input Levels W = Work Week This is a PbFree Device = PbFree Package Typical Applications PIN CONFIGURATION Notebook and Tablet Computers Handheld Electronics Digital Cameras Portable Medical Devices Hard Drives DELAY 1 13 BLEED Peripheral Ports V 2 12 CC V IN 19: V IN Controller 3 V 5.5 V 11 GND 3 V IN 0.5 V 6 V V 4 10 V IN IN Bandgap & Biases Delay and Charge Slew Rate (Top View) Pump Control RC ORDERING INFORMATION Oscillator Device Package Shipping NCP4543IMN5RGA QFN18 3000 / (PbFree) Tape & Reel For information on tape and reel specifications, Load including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Figure 1. Typical Application No external components included Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2016 Rev. 5 NCP4543/D DELAY SR GND BLEED V OUT V 5 IN V 6 OUT 7 V OUT V 8 OUT V 9 INNCP4543 PIN DESCRIPTION Pin Name Function 1 DELAY Turnon delay adjustment 2 V Supply voltage to controller (3.0 V 5.5 V) CC 3 GND Controller ground 4, 5, 912, 14, 18, 19 V Drain of MOSFET (0.5 V 6.0 V) IN 68 V Source of MOSFET connected to load OUT 13 BLEED Load bleed connection 15 EN Digital input used to turn on the MOSFET according to this truth table: EN POL MOSFET 0 0On 0 1Off 1 0Off 16 POL 1 1On EN has an internal pull down resistor to GND POL has an internal pull up resistor to V CC 17 SR Slew rate adjustment ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Supply Voltage Range V 0.3 to 6 V CC Input Voltage Range V 0.3 to 6 V IN Output Voltage Range V 0.3 to 6 V OUT EN/POL Digital Input Range V 0.3 to (V + 0.3) V EN CC Thermal Resistance, JunctiontoAir (Note 1) R 49.5 C/W JA Thermal Resistance, JunctiontoAir (Note 2) R 32.9 C/W JA Thermal Resistance, JunctiontoCase (V Paddle) 3.6 C/W R IN JC Continuous MOSFET Current (Note 3) I 7.3 A MAX Total Power Dissipation T = 25C (Notes 1 and 4) P 1.31 W A D Derate above T = 25C 20.2 mW/C A Total Power Dissipation T = 25C (Notes 2 and 4) P 1.98 W A D Derate above T = 25C 30.4 mW/C A Storage Temperature Range T 40 to 150 C STG Lead Temperature, Soldering (10 sec.) T 260 C SLD ESD Capability, Human Body Model (Note 5) ESD 3.5 kV HBM ESD Capability, Machine Model (Note 5) ESD 200 V MM ESD Capability, Charged Device Model (Note 5) ESD 1 kV CDM Latchup Current Immunity (Note 5) LU 100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 2. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 3. Current limited by package. 4. Specified for derating purposes only, ensure that I is never exceeded. MAX 5. Tested by the following methods T = 25C: A ESD Human Body Model tested per AECQ100002 (EIA/JESD22A114) ESD Machine Model tested per EIA/JESD22A115 ESD Charged Device Model per ESDSTM5.3.11999 Latchup Current Maximum Rating: 100 mA per JEDEC standard: JESD78 www.onsemi.com 2