NL3S2223 High-Speed USB 2.0 (480 Mbps) DPDT Switches The NL3S2223 is a DPDT switch optimized for highspeed USB 2.0 applications within portable systems. It features ultralow on capacitance, C = 5.5 pF (typ), and a bandwidth above 950 MHz. It ON wwwwww..onsemi.comonsemi.com is optimized for applications that use a single USB interface connector to route multiple signal types. The C and R of both channels are ON ON suitably low to allow the NL3S2223 to pass any speed USB data or audio signals going to a moderately resistive terminal such as an MARKING external headset. The device is offered in a UQFN10 1.4 mm x 1.8 mm DIAGRAM package. UQFN10 U3 M Features CASE 488AT 1 Optimized FlowThrough Pinout R : 5.0 Typ V = 4.2 V U3 = Device Code ON CC M = Date Code C : 5.5 pF Typ V = 3.3 V ON CC = PbFree Device V Range: 1.65 V to 4.5 V CC (Note: Microdot may be in either location) Typical Bandwidth: 950 MHz 1.4 mm x 1.8 mm x 0.50 mm UQFN10 OVT on Common Signal Pins D+/D up to 5.25 V ORDERING INFORMATION 8 kV HBM ESD Protection on All Pins Device Package Shipping These Devices are PbFree, Halogen Free/BFR Free and are RoHS NL3S2223MUTBG UQFN10 3000 / Tape & Compliant (PbFree) Reel Typical Applications For information on tape and reel specifications, High Speed USB 2.0 Data including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Mobile Phones Brochure, BRD8011/D. Portable Devices NL3S2223 HS USB XCVR FS USB XCVR or AUDIO AMP Figure 1. Application Diagram Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2018 Rev. 1 NL3S2223/D USB CONNECTORNL3S2223 HSD2+ HSD2 76 OE 8 5 HSD1+ V CC HSD1 9 4 CONTROL S 10 3 GND 12 D+ D Figure 2. Pin Connections and Logic Diagram (Top View) Table 1. PIN DESCRIPTION Table 2. TRUTH TABLE Pin Function HSD1+, HSD2+, HSD1 HSD2 OE S S Control Input 1 X OFF OFF OE Output Enable 0 0 ON OFF HSD1+, HSD1, HSD2+, Data Ports 0 1 OFF ON HSD2, D+, D MAXIMUM RATINGS Symbol Pins Parameter Value Unit V V Positive DC Supply Voltage 0.5 to +5.5 V CC CC V HSDn+, HSDn Analog Signal Voltage 0.5 to V + 0.3 V IS CC D+, D 0.5 to +5.25 V S, OE Control Input Voltage, Output Enable Voltage 0.5 to +5.5 V IN I V Positive DC Supply Current 50 mA CC CC T Storage Temperature 65 to +150 C S I HSDn+, HSDn, Analog Signal Continuous CurrentClosed Switch 300 mA IS CON D+, D I HSDn+, HSDn, Analog Signal Continuous Current 10% Duty Cycle 500 mA IS PK D+, D I S, OE Control Input Current, Output Enable Current 20 mA IN V HBM Human Body Model 8 kV ESD MM Machine Model 400 V I Latchup Performance 100 mA Latchup Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. RECOMMENDED OPERATING CONDITIONS Symbol Pins Parameter Min Max Unit V Positive DC Supply Voltage 1.65 4.5 V CC V HSDn+, HSDn Analog Signal Voltage GND V V IS CC D+, D GND 4.5 V S, OE Control Input Voltage, Output Enable Voltage GND V V IN CC T Operating Temperature 40 +85 C A Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2