X-On Electronics has gained recognition as a prominent supplier of NS6A5.0AT3G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. NS6A5.0AT3G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

NS6A5.0AT3G ON Semiconductor

NS6A5.0AT3G electronic component of ON Semiconductor
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Part No.NS6A5.0AT3G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ON Semiconductor TVS Diodes - Transient Voltage Suppressors SMA 5V UNI-DIRCTNL 600TVS
Datasheet: NS6A5.0AT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3562
Multiples : 3562
3562 : USD 0.1181
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.9309
10 : USD 0.756
100 : USD 0.2065
500 : USD 0.1569
1000 : USD 0.123
2500 : USD 0.1128
5000 : USD 0.1061
10000 : USD 0.1004
25000 : USD 0.0982
N/A

Obsolete
0
MOQ : 239
Multiples : 1
239 : USD 0.359
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Peak Surge Current
Length
Operating Temperature Range
Width
Brand
Mounting Style
Pd - Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NS6A5.0AT3G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NS6A5.0AT3G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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NS6A5.0AT3G 600 Watt Peak Power Zener Transient Voltage Suppressors Littelfuse.com Unidirectional The NS6A5.0AT3G is designed to protect voltage sensitive components from high voltage, high energy transients. This device PLASTIC SURFACE MOUNT has excellent clamping capability, high surge capability, low zener ZENER OVERVOLTAGE impedance and fast response time. The NS6A5.0AT3G is ideally TRANSIENT SUPPRESSORS suited for use in computer hard disk drives, communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Cathode Anode Specification Features: Peak Reverse Working Voltage of 5 V SMA Peak Pulse Power of 600 W (10 x 1000 sec) CASE 403D ESD Rating of Class 3 (>16 kV) per Human Body Model PLASTIC ESD Rating of Class 4 (>8 kV) IEC 6100042 Fast Response Time MARKING DIAGRAM Low Profile Package This is a PbFree Device 6QE AYWW Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic 6QE = Specific Device Code FINISH: All external surfaces are corrosion resistant and leads are A = Assembly Location readily solderable Y = Year MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: WW = Work Week = PbFree Package 260C for 10 Seconds LEADS: Modified LBend providing more contact area to bond pads POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any ORDERING INFORMATION Device Package Shipping NS6A5.0AT3G SMA 5000/Tape & Reel (PbFree) Specifications subject to change without notice. 2016 Littelfuse, Inc. 1 Publication Order Number: September 19, 2016 Rev. 1 NS6A5.0A/DNS6A5.0AT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) T = 25C, Pulse Width = 1 ms P 600 W L PK DC Power Dissipation T = 75C P 1.5 W L D Measured Zero Lead Length (Note 2) Derate Above 75C 20 mW/C Thermal Resistance from JunctiontoLead R 50 C/W JL DC Power Dissipation (Note 3) T = 25C P 0.5 W A D Derate Above 25C 4.0 mW/C Thermal Resistance from JunctiontoAmbient R 250 C/W JA Forward Surge Current (Note 4) T = 25C I 40 A A FSM Operating and Storage Temperature Range T , T 65 to +150 C J stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above het Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 10 X 1000 s, nonrepetitive. 2. 1 in square copper pad, FR4 board. 3. FR4 board, using Littelfuse minimum recommended footprint, as shown in 403D case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. ELECTRICAL CHARACTERISTICS (T = 25C unless A I otherwise noted, V = 3.5 V Max. I (Note 5) = 30 A) F F I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F 5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, UniDirectional TVS nonrepetitive duty cycle. ELECTRICAL CHARACTERISTICS Breakdown Voltage V I (Note 8) C PP V C RWM typ (Note 6) V (Note 7) Volts I V I (Note 9) I V BR T C PP R RWM Device Marking V A Min Nom Max mA V A pF Device NS6A5.0AT3G 6QE 5.0 800 6.40 6.7 7.0 10 9.2 65.2 2700 6. A transient suppressor is normally selected according to the working peak reverse voltage (V ), which should be equal to or greater than RWM the DC or continuous peak operating voltage level. 7. V measured at pulse test current I at an ambient temperature of 25C. BR T 8. Surge current waveform per Figure 1. 9. Bias Voltage = 0 V, F = 1 MHz, T = 25C. J Specifications subject to change without notice. 2016 Littelfuse, Inc. 2 Publication Order Number: September 19, 2016 Rev. 1 NS6A5.0A/D

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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