NSD070AL Switching Diode Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit CASE 318 SOT23 Reverse Voltage V 70 V R Forward Current (DC) I 200 mA F CATHODE CATHODE NonRepetitive Peak Forward Current I 500 mA FSM 1 2 t = 1.0 s Stresses exceeding those listed in the Maximum Ratings table may damage the 3 device. If any of these limits are exceeded, device functionality should not be ANODE assumed, damage may occur and reliability may be affected. MARKING DIAGRAM JY M JY = Specific Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping NSD070ALT1G SOT23 3,000 / (PbFree) Tape & Reel NSVD070ALT1G SOT23 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2016 Rev. 2 NSD070AL/DNSD070AL THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 556 C/W JA Total Device Dissipation T = 25C P 225 mW A D Junction and Storage Temperature Range T , T 65 to +150 C J stg 1. FR4 = 1.0 0.75 0.062 in. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V V (BR) (V = 70 Vdc) 70 R Reverse Voltage Leakage Current I nA R (V = 70 Vdc) 5.0 R (V = 70 Vdc, T = 150C) 80 R J Diode Capacitance C pF D (V = 0 V, f = 1.0 MHz) 1.0 2.0 R Forward Voltage V mV F (I = 1.0 mA) 900 F (I = 10 mA) 1000 F (I = 50 mA) 1100 F (I = 150 mA) 1250 F Reverse Recovery Time t s rr (I = I = 10 mA) (Figure 1) 3.0 F R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R V PULSE SAMPLING R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2