NSPM5131 ESD Protection Diode Low Clamping Voltage Features Unidirectional High Voltage ESD Protection www.onsemi.com Provides ESD Protection to IEC6100042 Level 4: 30 kV Contact Discharge IEC 6100045 (lighting) High Voltage Zener Diode Protects Supply Rail up to 160 A (8/20 s) These Devices are PbFree and are RoHS Compliant UDFN6 CASE 517CS APPLICATION DIAGRAM Vcc (1) BLOCK DIAGRAM Cathode Anode GND (6) DAP** MARKING DIAGRAM GND (5) A3 M 1 A3 = Specific Device Code M = Date Code = PbFree Package **Die Attach Pad on back of package (connect to ground) ORDERING INFORMATION Device Package Shipping NSPM5131MUTBG UDFN6 3000/Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2017 Rev. 2 NSPM5131/DNSPM5131 PACKAGE / PINOUT DIAGRAMS Table 1. PIN DESCRIPTIONS 4Channel, 6Lead, UDFN8 Package Top View Bottom View (Pins Down View) (Pins Up View) Pin Name Type Description 12 3 4 6 5 1 V HV V HV ESD Channel CC DD 2 N/C No Connect XX M 3 N/C No Connect 8 7 Pin 1 Marking 4 N/C No Connect 5 GND Ground 65 1 2 3 4 6 GND Ground 6Lead UDFN 7 GND Ground 8 GND Ground ELECTRICAL CHARACTERISTICS I Symbol Parameter I F I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM I Maximum Reverse Leakage Current V V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T V Maximum Temperature Coefficient of V BR BR I PP I Forward Current F V Forward Voltage I F F UniDirectional SPECIFICATIONS Table 2. MAXIMUM RATINGS Parameter Rating Units Operating Temperature Range 55 to +125 C Storage Temperature Range 65 to +150 C Peak Current (t = 8/20 s) 160 A p Stresses at or above those listed in Maximum Ratings table may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Also, due to variations in test equipment, stresses shown above are averages. ELECTRICAL CHARACTERISTICS V I C PP (Note 3) Breakdown Voltage (8 x 20 s) V (V) RWM V V (Note 2) I (mA) V (V) I (A) (Note 1) I V A) BR T C PP R RWM Device Marking Max Max Min Nom Max Max Device Name NSPM5131 A3 13.5 1 13.6 15.5 17.5 1 21.5 100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. A transient suppressor is normally selected according to the working peak reverse voltage (V ), which should be equal to or greater than RWM the DC or continuous peak operating voltage level. 2. V measured at pulse test current I at an ambient temperature of 25C. BR T 3. Surge current waveform per Figure 2. www.onsemi.com 2