X-On Electronics has gained recognition as a prominent supplier of NSPU3061N2T5G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. NSPU3061N2T5G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

NSPU3061N2T5G ON Semiconductor

NSPU3061N2T5G electronic component of ON Semiconductor
NSPU3061N2T5G ON Semiconductor
NSPU3061N2T5G ESD Suppressors / TVS Diodes
NSPU3061N2T5G  Circuit Protection

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See Product Specifications
Part No. NSPU3061N2T5G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes UNI-DIRECTIONAL SURGE PRO
Datasheet: NSPU3061N2T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
298: USD 0.2289 ea
Line Total: USD 68.21 
Availability - 3559
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ: 298  Multiples: 1
Pack Size: 1
Availability Price Quantity
3559
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 298
Multiples : 1
298 : USD 0.2289
491 : USD 0.1391
496 : USD 0.1377
501 : USD 0.1363
781 : USD 0.0874
787 : USD 0.0867
1050 : USD 0.065
1471 : USD 0.0464
3000 : USD 0.0312

164
Ship by Tue. 18 Mar to Fri. 21 Mar
MOQ : 5
Multiples : 5
5 : USD 0.1855
50 : USD 0.1815
150 : USD 0.1535
500 : USD 0.1361

38495
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 0.2993
10 : USD 0.1824
100 : USD 0.0882
1000 : USD 0.0763
2500 : USD 0.0705
8000 : USD 0.0647
24000 : USD 0.0624
48000 : USD 0.0601

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Current Rating
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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We are delighted to provide the NSPU3061N2T5G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSPU3061N2T5G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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NSPU3061 6.3 V Unidirectional ESD and Surge Protection Device The NSPU3061 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, high peak www.onsemi.com pulse current handling capability and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, tablets, MP3 players, MARKING digital cameras and many other portable applications where board DIAGRAM space comes at a premium. X2DFN2 6 M Features CASE 714AB Low Clamping Voltage 6 = Specific Device Code Low Leakage M = Date Code Small Body Outline: 1.0 mm x 0.6 mm Protection for the Following IEC Standards: IEC6100042 Level 4: 30 kV Contact Discharge IEC6100045 (Lightning): 36 A (8/20 s) 1 2 These Devices are PbFree, Halogen Free/BFR Free and are RoHS CATHODE ANODE Compliant Typical Applications ORDERING INFORMATION USB V and CC Line Protection BUS Microphone Line Protection Device Package Shipping GPIO Protection NSPU3061N2T5G X2DFN2 8000 / Tape & (PbFree) Reel Table 1. MAXIMUM RATINGS For information on tape and reel specifications, Rating Symbol Value Unit including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications IEC 6100042 (ESD) Contact 30 kV Brochure, BRD8011/D. Air 30 Operating Junction Temperature Range T 65 to + C J 150 Storage Temperature Range T 65 to + C STG 150 Minimum Peak Pulse Current I 36 A PP Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: March, 2019 Rev. 3 NSPU3061/DNSPU3061 Table 2. ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage V V V RWM C BR RWM V I V R F I Maximum Reverse Leakage Current V R RWM I T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional Surge Protection Table 3. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 6.3 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 6.4 6.9 9.5 V BR T Reverse Leakage Current I V = 6.3 V, I/O Pin to GND 0.02 1 A R RWM Clamping Voltage (Note 1) V IEC6100042, 8 kV Contact See Figures 2 & 3 V C Clamping Voltage TLP V V I = 8 A IEC6100042 Level 2 Equivalent 6.4 C PP (Note 2) (4 kV Contact, 8 kV Air) I = 16 A IEC6100042 Level 4 Equivalent 6.6 PP (8 kV Contact, 15 kV Air) Reverse Peak Pulse Current I IEC6100045 (8x20 s) per Figure 1 36 40 A PP Clamping Voltage 8x20 s V I = 20 A 6.6 8.0 V C PP Waveform per Figure 1 I = 30 A 7.3 9.0 PP I = 36 A 7.7 9.7 PP Dynamic Resistance R 100 ns TLP 0.025 DYN Junction Capacitance C V = 0 V, f = 1 MHz 90 110 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. For test procedure see application note AND8307/D 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 TYPICAL CHARACTERISTICS 100 t PEAK VALUE I 8 s r RSM 90 PULSE WIDTH (t ) IS DEFINED P 80 AS THAT POINT WHERE THE 70 PEAK CURRENT DECAY = 8 s 60 HALF VALUE I /2 20 s RSM 50 40 30 t P 20 10 0 020 40 60 80 t, TIME ( s) Figure 1. 8 x 20 s Pulse Waveform www.onsemi.com 2 % OF PEAK PULSE CURRENT

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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