NSPU3061 6.3 V Unidirectional ESD and Surge Protection Device The NSPU3061 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, high peak www.onsemi.com pulse current handling capability and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, tablets, MP3 players, MARKING digital cameras and many other portable applications where board DIAGRAM space comes at a premium. X2DFN2 6 M Features CASE 714AB Low Clamping Voltage 6 = Specific Device Code Low Leakage M = Date Code Small Body Outline: 1.0 mm x 0.6 mm Protection for the Following IEC Standards: IEC6100042 Level 4: 30 kV Contact Discharge IEC6100045 (Lightning): 36 A (8/20 s) 1 2 These Devices are PbFree, Halogen Free/BFR Free and are RoHS CATHODE ANODE Compliant Typical Applications ORDERING INFORMATION USB V and CC Line Protection BUS Microphone Line Protection Device Package Shipping GPIO Protection NSPU3061N2T5G X2DFN2 8000 / Tape & (PbFree) Reel Table 1. MAXIMUM RATINGS For information on tape and reel specifications, Rating Symbol Value Unit including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications IEC 6100042 (ESD) Contact 30 kV Brochure, BRD8011/D. Air 30 Operating Junction Temperature Range T 65 to + C J 150 Storage Temperature Range T 65 to + C STG 150 Minimum Peak Pulse Current I 36 A PP Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: March, 2019 Rev. 3 NSPU3061/DNSPU3061 Table 2. ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage V V V RWM C BR RWM V I V R F I Maximum Reverse Leakage Current V R RWM I T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional Surge Protection Table 3. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 6.3 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 6.4 6.9 9.5 V BR T Reverse Leakage Current I V = 6.3 V, I/O Pin to GND 0.02 1 A R RWM Clamping Voltage (Note 1) V IEC6100042, 8 kV Contact See Figures 2 & 3 V C Clamping Voltage TLP V V I = 8 A IEC6100042 Level 2 Equivalent 6.4 C PP (Note 2) (4 kV Contact, 8 kV Air) I = 16 A IEC6100042 Level 4 Equivalent 6.6 PP (8 kV Contact, 15 kV Air) Reverse Peak Pulse Current I IEC6100045 (8x20 s) per Figure 1 36 40 A PP Clamping Voltage 8x20 s V I = 20 A 6.6 8.0 V C PP Waveform per Figure 1 I = 30 A 7.3 9.0 PP I = 36 A 7.7 9.7 PP Dynamic Resistance R 100 ns TLP 0.025 DYN Junction Capacitance C V = 0 V, f = 1 MHz 90 110 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. For test procedure see application note AND8307/D 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 TYPICAL CHARACTERISTICS 100 t PEAK VALUE I 8 s r RSM 90 PULSE WIDTH (t ) IS DEFINED P 80 AS THAT POINT WHERE THE 70 PEAK CURRENT DECAY = 8 s 60 HALF VALUE I /2 20 s RSM 50 40 30 t P 20 10 0 020 40 60 80 t, TIME ( s) Figure 1. 8 x 20 s Pulse Waveform www.onsemi.com 2 % OF PEAK PULSE CURRENT