X-On Electronics has gained recognition as a prominent supplier of NSQA12VAW5T2G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. NSQA12VAW5T2G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

NSQA12VAW5T2G ON Semiconductor

NSQA12VAW5T2G electronic component of ON Semiconductor
NSQA12VAW5T2G ON Semiconductor
NSQA12VAW5T2G ESD Suppressors / TVS Diodes
NSQA12VAW5T2G  Circuit Protection

Images are for reference only
See Product Specifications
Part No. NSQA12VAW5T2G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes Low Cap. TVS Quad Array for ESD
Datasheet: NSQA12VAW5T2G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.1382
10 : USD 0.0777
25 : USD 0.0776
50 : USD 0.0774
100 : USD 0.0772
250 : USD 0.0756
500 : USD 0.0756
1000 : USD 0.0756
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.9673
10 : USD 0.7503
100 : USD 0.1799
500 : USD 0.1663
1000 : USD 0.114
3000 : USD 0.1004
9000 : USD 0.0962
N/A

Obsolete
0
MOQ : 2841
Multiples : 1
2841 : USD 0.165
N/A

Obsolete
0
MOQ : 2841
Multiples : 1
2841 : USD 0.165
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Capacitance
Dimensions
Brand
Channels
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
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We are delighted to provide the NSQA12VAW5T2G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSQA12VAW5T2G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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ESD Protection Diode Single Line CAN/LIN Bus Protector NSQA6V8AW5T2 Series This integrated surge protection device (surge protection) is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and www.onsemi.com other applications. Its integrated design provides very effective and reliable protection for four separate lines using only one package. These devices are ideal for situations where board space is at a premium. 1 4 Features 2 Low Clamping Voltage Small SC88A SMT Package 3 5 Stand Off Voltage: 5 V Low Leakage Current < 1 A Four Separate Unidirectional Configurations for Protection ESD Protection: IEC6100042: Level 4 MILSTD 883C Method 30156: Class 3 These Devices are PbFree and are RoHS Compliant SC88A/SOT353 CASE 419A02 Benefits Provides Protection for ESD Industry Standards: IEC 61000, HBM Minimize Power Consumption of the System MARKING DIAGRAM Minimize PCB Board Space 45 Typical Applications 6x M Instrumentation Equipment Serial and Parallel Ports 132 Microprocessor Based Equipment x = H for NSQA6V8AW5T2 Notebooks, Desktops, Servers = X for NSQA12VAW5T2 Cellular and Portable Equipment M = Date Code = PbFree Package MAXIMUM RATINGS (T = 25C unless otherwise noted) A (Note: Microdot may be in either location) Rating Symbol Value Unit Peak Power Dissipation P 20 W PK 8 20 sec Double Exponential Waveform (Note 1) ORDERING INFORMATION Steady State Power 1 Diode (Note 2) P 380 mW D Thermal Resistance R JA Device Package Shipping JunctiontoAmbient 327 C/W Above 25C, Derate 3.05 mW/C NSQA6V8AW5T2G SC88A 3000/Tape & Reel (PbFree) Operating Junction Temperature T 40 to +125 C J Range NSQA12VAW5T2G SC88A 3000/Tape & Reel Storage Temperature Range T 55 to +150 C stg (PbFree) Lead Solder Temperature Maximum T 260 C L For information on tape and reel specifications, 10 Seconds Duration including part orientation and tape sizes, please IEC 100042 (ESD) Contact 8.0 kV refer to our Tape and Reel Packaging Specifications Stresses exceeding those listed in the Maximum Ratings table may damage the Brochure, BRD8011/D. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 6. 2. Only 1 diode under power. For all 4 diodes under power, P will be 25%. D Mounted on FR4 board with min pad. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: April, 2020 Rev. 7 NSQA6V8AW5T2/DNSQA6V8AW5T2 Series ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F UniDirectional P Peak Power Dissipation pk C Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit NSQA6V8AW5T2 Breakdown Voltage (I = 1 mA) (Note 3) V 6.4 6.8 7.1 V T BR Leakage Current (V = 5.0 V) I 1.0 A RWM R Clamping Voltage 1 (I = 1.6 A) (Note 4) V 13 V PP C Maximum Peak Pulse Current (Note 4) I 1.6 A PP Junction Capacitance (V = 0 V, f = 1 MHz) C 12 15 pF R J (V = 3.0 V, f = 1 MHz) 6.7 9.5 R Clamping Voltage Per IEC6100042 V Figures 1 and 2 V C NSQA12VAW5T2 Breakdown Voltage (I = 5 mA) (Note 3) V 11.4 12.0 12.7 V T BR Leakage Current (V = 9.0 V) I 0.05 A RWM R Zener Impedence (I = 5 mA) Z 30 T Z Clamping Voltage 1 (I = 0.9 A) (Note 4) V 23 V PP C Maximum Peak Pulse Current (Note 4) I 0.9 A PP Junction Capacitance (V = 0 V, f = 1 MHz) C 15 pF R J Clamping Voltage Per IEC6100042 (Note 5) V Figures 1 and 2 V C 3. V is measured at pulse test current I . BR T 4. Surge current waveform per Figure 5. 5. For test procedure see Figures 3 and 4 and Application Note AND8307/D. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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