5.5 V Unidirectional ESD and Surge Protection Device NSPU3051 The NSPU3051 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, high peak pulse current handling capability and fast response time provide best www.onsemi.com in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, tablets, MP3 players, digital cameras and many other portable applications where board MARKING space comes at a premium. DIAGRAM Features X2DFN2 5 M Low Clamping Voltage CASE 714AB Low Leakage 5 = Specific Device Code Small Body Outline: 1.0 mm x 0.6 mm M = Date Code Protection for the Following IEC Standards: IEC6100042 Level 4: 30 kV Contact Discharge IEC6100045 (Lightning): 36 A (8/20 s) These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 2 CATHODE ANODE Compliant Typical Applications USB V and CC Line Protection BUS ORDERING INFORMATION Microphone Line Protection Device Package Shipping GPIO Protection NSPU3051N2T5G X2DFN2 8000 / Tape & Table 1. MAXIMUM RATINGS (PbFree) Reel Rating Symbol Value Unit For information on tape and reel specifications, including part orientation and tape sizes, please IEC 6100042 (ESD) Contact 30 kV refer to our Tape and Reel Packaging Specifications Air 30 Brochure, BRD8011/D. Operating Junction Temperature Range T 65 to + C J 150 Storage Temperature Range T 65 to + C STG 150 Minimum Peak Pulse Current I 36 A PP Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: December, 2020 Rev. 4 NSPU3051/DNSPU3051 Table 2. ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage V V V RWM C BR RWM V I V R F I Maximum Reverse Leakage Current V R RWM I T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional Surge Protection Table 3. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 5.5 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 5.7 9.1 V BR T Reverse Leakage Current I V = 5.5 V, I/O Pin to GND 0.1 A R RWM Clamping Voltage (Note 1) V IEC6100042, 8 kV Contact See Figures 2 & 3 V C Clamping Voltage TLP V V I = 8 A IEC6100042 Level 2 Equivalent 6.0 C PP (Note 2) (4 kV Contact, 8 kV Air) I = 16 A IEC6100042 Level 4 Equivalent 6.2 PP (8 kV Contact, 15 kV Air) Reverse Peak Pulse Current I IEC6100045 (8x20 s) per Figure 1 36 A PP Clamping Voltage 8x20 s V I = 36 A 7.5 9.5 V C PP Waveform per Figure 1 Dynamic Resistance R 100 ns TLP 0.025 DYN Junction Capacitance C V = 0 V, f = 1 MHz 100 130 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. For test procedure see application note AND8307/D 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 1 ns, averaging window t = 70 ns to t = 90 ns. 0 p r 1 2 TYPICAL CHARACTERISTICS 100 t PEAK VALUE I 8 s r RSM 90 PULSE WIDTH (t ) IS DEFINED P 80 AS THAT POINT WHERE THE 70 PEAK CURRENT DECAY = 8 s 60 HALF VALUE I /2 20 s RSM 50 40 30 t P 20 10 0 020 40 60 80 t, TIME ( s) Figure 1. 8 x 20 s Pulse Waveform www.onsemi.com 2 % OF PEAK PULSE CURRENT