X-On Electronics has gained recognition as a prominent supplier of NSV2SC5658M3T5G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSV2SC5658M3T5G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NSV2SC5658M3T5G ON Semiconductor

NSV2SC5658M3T5G electronic component of ON Semiconductor
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See Product Specifications
Part No.NSV2SC5658M3T5G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT GENERAL PURPOSE
Datasheet: NSV2SC5658M3T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2046 ea
Line Total: USD 0.2 
Availability - 19852
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19852
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2046
10 : USD 0.1408
100 : USD 0.0737
1000 : USD 0.0627
2500 : USD 0.0616
8000 : USD 0.0484
24000 : USD 0.0473
48000 : USD 0.044

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NSV2SC5658M3T5G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSV2SC5658M3T5G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is 2SC5658M3T5G, 2SC5658RM3T5G ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (I = 50 Adc, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage (I = 1.0 mAdc, I = 0) V 50 Vdc C B (BR)CEO Emitter-Base Breakdown Voltage (I = 50 Adc, I = 0) V 7.0 Vdc E E (BR)EBO Collector-Base Cutoff Current (V = 30 Vdc, I = 0) I 0.5 A CB E CBO Emitter-Base Cutoff Current (V = 4.0 Vdc, I = 0) I 0.5 A EB B EBO Collector-Emitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B DC Current Gain (Note 2) h FE (V = 6.0 Vdc, I = 1.0 mAdc) 2SC5658M3T5G 120 560 CE C (V = 6.0 Vdc, I = 1.0 mAdc) 2SC5658RM3T5G 215 375 CE C Transition Frequency (V = 12 Vdc, I = 2.0 mAdc, f = 30 MHz) f 180 MHz CE C T Output Capacitance (V = 12 Vdc, I = 0 Adc, f = 1.0 MHz) C 2.0 pF CB C OB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Include NSVprefix devices where applicable. 2. Pulse Test: Pulse Width 300 s, D.C. 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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