2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is 2SC5658M3T5G, 2SC5658RM3T5G ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (I = 50 Adc, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage (I = 1.0 mAdc, I = 0) V 50 Vdc C B (BR)CEO Emitter-Base Breakdown Voltage (I = 50 Adc, I = 0) V 7.0 Vdc E E (BR)EBO Collector-Base Cutoff Current (V = 30 Vdc, I = 0) I 0.5 A CB E CBO Emitter-Base Cutoff Current (V = 4.0 Vdc, I = 0) I 0.5 A EB B EBO Collector-Emitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B DC Current Gain (Note 2) h FE (V = 6.0 Vdc, I = 1.0 mAdc) 2SC5658M3T5G 120 560 CE C (V = 6.0 Vdc, I = 1.0 mAdc) 2SC5658RM3T5G 215 375 CE C Transition Frequency (V = 12 Vdc, I = 2.0 mAdc, f = 30 MHz) f 180 MHz CE C T Output Capacitance (V = 12 Vdc, I = 0 Adc, f = 1.0 MHz) C 2.0 pF CB C OB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Include NSVprefix devices where applicable. 2. Pulse Test: Pulse Width 300 s, D.C. 2%.