NSVD350HT1G ON Semiconductor

NSD350H High Voltage Switching Diode The NSD350H is a high voltage switching diode in a SOD323 surface mount package. Features www.onsemi.com Small Footprint Package, SOD323 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 1 2 CATHODE ANODE Qualified and PPAP Capable Pbfree Device, Halogen Free/BFR Free and are RoHS Compliant MARKING Typical Applications DIAGRAM Flat Panel TVs Power Supply SOD323 AJ M Industrial CASE 477 STYLE 1 Wireless Handsets Automotive Modules AJ = Specific Device Code M = Date Code = PbFree Package MAXIMUM RATINGS Single Diode (T = 25C) A Rating Symbol Max Unit (Note: Microdot may be in either location) Reverse Voltage V 350 V R Forward Current (DC) I 200 mA F ORDERING INFORMATION NonRepetitive Peak Forward Current I A FSM Device Package Shipping (Square Wave, T = 25C prior to surge) J t = 10 s 12 NSD350HT1G SOD323 3000 / Tape & t = 100 s 5 (PbFree) Reel NSVD350HT1G 2 t = 1 ms t = 10 ms 1.5 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification THERMAL CHARACTERISTICS Brochure, BRD8011/D. Characteristic Symbol Max Unit Total Device Dissipation P D T = 25C (Note 1) 250 mW A Derate above 25C 2 mW/C Thermal Resistance, R 500 C/W JA Junction to Ambient (Note 1) Junction and Storage Temperature T , T 55 to C J stg Range +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. FR4 100 mm 2 oz Cu PCB Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: April, 2015 Rev. 0 NSD350H/DNSD350H Table 1. ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (I = 10 A) V 350 V (BR)R R Reverse Leakage (V = 300 V) I 150 nA R R Reverse Leakage (V = 350 V) I 5 A R R Forward Voltage (I = 100 mA) V 1.1 V F F Total Capacitance (V = 0 V, f = 1.0 MHz) C 5.0 pF R T Reverse Recovery Time (I = I = 10 mA, I (rec) = 1.0 mA, Figure 1) t 55 ns F R R rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 +10 V 2 k 0.1 F I F t t T r p I F 100 H t T 10% rr 0.1 F DUT 90% 50 OUTPUT 50 INPUT i = 1 mA PULSE SAMPLING R(REC) I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2