DAP222, DAP202U Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The DAP222 device is housed in the SC75/SOT416 package which is www.onsemi.com designed for low power surface mount applications, where board space is at a premium. The DAP202U device is housed in the SC70/SOT323 package. ANODE 3 Features Fast t rr Low C D NSV Prefix for Automotive and Other Applications Requiring 12 Unique Site and Control Change Requirements AECQ101 CATHODE Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS MARKING Compliant DIAGRAMS 3 SC70 NB M CASE 419 MAXIMUM RATINGS (T = 25C) 1 A 1 2 Rating Symbol Value Unit Reverse Voltage V 80 Vdc R 3 SC75 Peak Reverse Voltage V 80 Vdc RM P9 M CASE 463 Forward Current I 100 mAdc F STYLE 4 2 1 1 Peak Forward Current I 300 mAdc FM Peak Forward Surge Current 2.0 Adc I (1) NB, P9 = Device Codes FSM M = Date Code* THERMAL CHARACTERISTICS = PbFree Package Rating Symbol Max Unit (Note: Microdot may be in either location) Power Dissipation P 150 mW *Date Code orientation and/or orientation may D vary depending upon manufacturing location. Junction Temperature T 150 C J Storage Temperature T 55 ~ +150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. DAP202UG SC70 3000 / Tape & Reel (PbFree) DAP222G SC75 3000 / Tape & Reel (PbFree) DAP222T1G SC75 3000 / Tape & Reel (PbFree) NSVDAP222T1G SC75 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: October, 2017 Rev. 6 DAP222/DDAP222, DAP202U ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current I V = 70 V 0.1 Adc R R Forward Voltage V I = 100 mA 1.2 Vdc F F Reverse Breakdown Voltage V I = 100 A 80 Vdc R R Diode Capacitance C V = 6.0 V, f = 1.0 MHz 3.5 pF D R Reverse Recovery Time DAP222 t (2) 4.0 ns I = 5.0 mA, V = 6.0 V, R = 100 , I = 0.1 I rr F R L rr R DAP202U t (3) 10.0 I = 5.0 mA, V = 6.0 V, R = 50 , I = 0.1 I tt F R L rr R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. t = 1 S 2. t Test Circuit for DAP222 in Figure 4. rr 3. trr Test Circuit for DAP202U in Figure 5. TYPICAL ELECTRICAL CHARACTERISTICS 100 10 T = 150C A T = 85C A T = 125C A 1.0 10 T = - 40C A T = 85C A 0.1 T = 55C 1.0 A T = 25C A 0.01 T = 25C A 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Forward Voltage Figure 2. Reverse Current 1.75 1.5 1.25 1.0 0.75 0 24 6 8 V , REVERSE VOLTAGE (VOLTS) R Figure 3. Diode Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , DIODE CAPACITANCE (pF) D I , REVERSE CURRENT (A) R