NTMFS4H01N MOSFET Power, Single, N-Channel, SO-8FL 25 V, 334 A Features Optimized Design to Minimize Conduction and Switching Losses www.onsemi.com Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are PbFree, Halogen Free/BFR Free and are RoHS V MAX R TYP Q GS DS(on) GTOT Compliant 4.5 V 0.97 m 39 nC Applications 10 V 0.7 m 85 nC High Performance DC-DC Converters System Voltage Rails Netcom, Telecom PIN CONNECTIONS Servers & Point of Load SO8FL (5 x 6 mm) MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Units Drain-to-Source Voltage V 25 V DSS Gate-to-Source Voltage V 20 V GS (Top View) (Bottom View) Continuous Drain Current R I 54 A JA D (T = 25C, Note 1) A Power Dissipation R P 3.2 W JA D (T = 25C, Note 1) NCHANNEL MOSFET A Continuous Drain Current R I 334 A D (58) JC D (T = 25C, Note 1) C Power Dissipation R P 125 W JC D (T = 25C, Note 1) C Pulsed Drain Current (t = 10 s) I 568 A G (4) p DM Single Pulse Drain-to-Source Avalanche E 505 mJ AS Energy (Note 1) (I = 58 A , L = 0.3 mH) L pk S (1,2,3) Drain to Source dV/dt dV/dt 7 V/ns Maximum Junction Temperature T 150 C J(max) ORDERING INFORMATION Storage Temperature Range T 55 to C STG See detailed ordering and shipping information on page 7 of 150 this data sheet. Lead Temperature Soldering Reflow (SMD T 260 C SLD Styles Only), Pb-Free Versions (Note 2) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 2 1. Values based on copper area of 645 mm (or 1 in ) of 2 oz copper thickness and FR4 PCB substrate. 2. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3. This is the absolute maximum rating. Parts are 100% UIS tested at T = 25C, J V = 10 V, I = 38 A, E = 217 mJ. GS L AS Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: May, 2019 Rev. 3 NTMFS4H01N/DNTMFS4H01N THERMALCHARACTERISTICS Parameter Symbol Max Units Thermal Resistance, C/W Junction-to-Ambient (Note 1 and 4) R 38.9 JA Junction-to-Case (Note 1 and 4) 1.0 R JC 4. Thermal Resistance R and R as defined in JESD513. JA JC www.onsemi.com 2